Comparative Analysis of Crosstalk Effects in Dielectric Inserted Horizontal andVertical Multi-layer GNR Interconnects for Ternary Logic System

In this work, the performance of copper (Cu), dielectric inserted horizontal graphene nanoribbon (Di-HGNR) interconnect and dielectric inserted vertical graphene nanoribbon (Di-VGNR) interconnects are investigated using active shielding and passive shielding techniques. However, the analysis is carried out by adapting driver-interconnect-load system. This analysis considers the interconnect length from 500 to 2000 μ m for 10 nm technology node. Further, the crosstalk induced effects on various interconnect structures are examined. It is envisaged that Di-VGNR exhibits lowest propagation delay compared to Cu and Di-HGNR. Further, the in-phase and out-phase crosstalk delay among the coupled interconnect lines is determined. It is investigated that active shielded Di-VGNR has least crosstalk induced delay compared to other interconnect structures considered in this study. Therefore, Di-VGNR interconnects outperforms Cu and Di-HGNR and are best suited for future VLSI interconnects.