Effect of Biased Field Rings to Improve Charge Removal after Heavy-Ion Strikes in Vertical Geometry β-Ga2O3 Rectifiers
Source abstract
Abstract
In this study, the response to a heavy-ion strike and the resulting single effect burnout on beta-Ga2O3 Schottky diodes with biased field rings is investigated via TCAD. The model used to simulate the device under high-reverse bias is validated using experimental current-voltage (I-V) curves. A field ring configuration for the device demonstrates an improved charge removal after simulated heavy-ion strikes. If the time scale for charge removal is faster than single event burnout, this can be an effective mechanism for reducing the effect of single ion strikes. This study explores various configurations of the termination structure and shows the impact of different design parameters in terms of a transient response after the ion strike.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (30)
Show source-provided references
1. A review of Ga2O3 materials, processing, and devices10.1063/1.5006941 ↗
2. Review—radiation damage in wide and ultra-wide bandgap semiconductors10.1149/2162-8777/abfc23 ↗
3. Gallium oxide vertical transistor with the world’s highest breakdown voltage
4. Effect of probe geometry during measurement of >100 A Ga2O3 vertical rectifiers10.1116/6.0000815 ↗
5. Design and implementation of floating field ring edge termination on vertical geometry β-Ga2O3 rectifiers10.1116/6.0000693 ↗
6. Single-event burnout of sic junction barrier schottky diode high-voltage power devices10.1109/TNS.2017.2782227 ↗
7. Thermal runaway in sic schottky barrier diodes caused by heavy ions10.1109/TNS.2019.2914494 ↗
8. Research of single-event burnout and hardened GaN MISFET with embedded PN junction10.1016/j.microrel.2020.113699 ↗
9. Analysis of heavy ion irradiation induced thermal damage in SiC Schottky diodes10.1109/TNS.2014.2387014 ↗
10. Enhanced charge collection in sic power MOSFETs demonstrated by pulse-laser two-photon absorption see experiments10.1109/TNS.2019.2922883 ↗
11. Single event effects in Si and SiC power MOSFETs due to terrestrial neutrons10.1109/TNS.2016.2640945 ↗
12. Single-event effects in silicon and silicon carbide power devices
13. Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs10.1109/TNS.2021.3079846 ↗
14. Lauenstein · the 2021 NEPP Electronics Technology Workshop, Greenbelt, MD, June 14-17 · 2021
15. Irradiation effects on the structural and optical properties of single crystal β-Ga2O3, Semiconductor
16. Effects of Energetic Ion Irradiation on β-Ga2O310.1149/2162-8777/ab8b49 ↗
17. Radiation damage in β-Ga2O3 induced by swift heavy ions10.7567/1347-4065/ab5599 ↗
18. Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes
19. Ion-induced energy pulse mechanism for single-event burnout in high-voltage sic power MOSFETs and Junction barrier schottky diodes10.1109/TNS.2019.2955922 ↗
20. Ion-induced mesoplasma formation and thermal destruction in 4h-sic power MOSFET devices10.1109/TNS.2021.3068196 ↗
21. TCAD simulation of the single event effects in normally-off gan transistors after heavy ion radiation10.1109/TNS.2017.2710629 ↗
22. Simulation study of single-event burnout in GaN MISFET with Schottky element10.1109/TED.2020.3027533 ↗
23. Experimental estimation of electron–hole pair creation energy in β-Ga2O310.1063/5.0053301 ↗
24. Surface related tunneling leakage in β-Ga2O3 (001) vertical Schottky barrier diodes10.7567/1882-0786/ab2824 ↗
25. Leakage current modelling and optimization of β-Ga2O3 Schottky barrier diode with ni contact under high reverse voltage10.1149/2162-8777/abc834 ↗
26. Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model
27. Simulation study of enhancement mode multi-gate vertical gallium oxide MOSFETs10.1149/2.0181907jss ↗
28. Continuum based modeling of silicon integrated circuit processing: an object-oriented approach10.1016/S0927-0256(98)00020-2 ↗
29. Design of a 6 kV Beta-Ga2O3 PN Heterojunction Diode with Etched Double-Layered NiO with a figure of Merit of 10 GW cm−210.1149/2162-8777/ac66fd ↗
30. 1-kV sputtered p-NiO/n-Ga2O3 heterojunction diodes with an ultra-low leakage current below $1∼\mu$ A/cm210.1109/LED.2020.2967418 ↗