Hysteretic Current-Voltage Characteristics and Memristive Behaviors in AgI Nano-Particles Assembly
Source abstract
Abstract
This paper reports obvious hysteretic current-voltage (I–V) characteristics and memristive behaviors of bulk silver iodide (AgI) nano-particles assembly, obtained using a chemical reaction method. According to the as-obtained stable bipolar I–V plots, resistance ratio between high resistance state and low resistance state was measured to be over 100 on a sandwich structure of Ag/AgI/Ag. Dependences of I–V loops on voltage scan rate (0.1, 1, 10 and 100 V/s), voltage range (0.9, 1.2, 1.8 and 3.25 V) and testing temperature (−50, −25, 0, 25, 50°C) were investigated. An electrochemical redox reaction of I2 on the interface between Ag electrode and AgI electrolyte was suggested for explanation. This model was further confirmed by applying unidirectional voltage scan, asymmetric voltage and results from sandwich structure using Pt electrodes.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Photoreceptor and optogenetics research
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