journal article·2022-04

An Advanced High‐Entropy Fluorophosphate Cathode for Sodium‐Ion Batteries with Increased Working Voltage and Energy Density

Zhen‐Yi Gu, Jin‐Zhi Guo, Jun‐Ming Cao, Xiao‐Tong Wang, Xin‐Xin Zhao, Xue‐Ying Zheng, Wen‐Hao Li, Zhong‐Hui Sun, Hao‐Jie Liang, Xing‐Long Wu

Advanced Materials· Volume 34· Issue 14
Publisher page

Abstract

Abstract Impossible voltage plateau regulation for the cathode materials with fixed active elemental center is a pressing issue hindering the development of Na‐superionic‐conductor (NASICON)‐type Na3V2(PO4)2F3 (NVPF) cathodes in sodium‐ion batteries (SIBs). Herein, a high‐entropy substitution strategy, to alter the detailed crystal structure of NVPF without changing the central active V atom, is pioneeringly utilized, achieving simultaneous electronic conductivity enhancement and diffusion barrier reduction for Na+, according to theoretical calculations. The as‐prepared carbon‐free high‐entropy Na3V1.9(Ca,Mg,Al,Cr,Mn)0.1(PO4)2F3 (HE‐NVPF) cathode can deliver higher mean voltage of 3.81 V and more advantageous energy density up to 445.5 Wh kg−1, which is attributed by the diverse transition‐metal elemental substitution in high‐entropy crystalline. More importantly, high‐entropy introduction can help realize disordered rearrangement of Na+ at Na(2) active sites, thereby to refrain from unfavorable discharging behaviors at low‐voltage region, further lifting up the mean working voltage to realize a full Na‐ion storage at the high voltage plateau. Coupling with a hard carbon (HC) anode, HE‐NVPF//HC SIB full cells can deliver high specific energy density of 326.8 Wh kg−1 at 5 C with the power density of 2178.9 W kg−1. This route means the unlikely potential regulation in NASICON‐type crystal with unchangeable active center becomes possible, inspiring new ideas on elevating the mean working voltage for SIB cathodes.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Advancements in Battery Materials · Advanced Battery Materials and Technologies · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

MOE Key Laboratory for UV Light‐Emitting Materials and Technology Northeast Normal University Changchun Jilin 130024 P. R. China

Department of Chemistry Northeast Normal University Changchun Jilin 130024 P. R. China

Institute of New Energy for Vehicles School of Materials Science and Engineering Tongji University Shanghai 201804 China

Center for Advanced Analytical Science c/o School of Chemistry and Chemical Engineering c/o MOE Key Laboratory for Water Quality and Conservation of the Pearl River Delta Guangzhou University Guangzhou Guangdong 510006 P. R. China

Funding

National Natural Science Foundation of China

References (48)

Show source-provided references
1. 10.1038/nchem.208510.1038/nchem.2085 ↗
2. 10.1038/nnano.2015.19410.1038/nnano.2015.194 ↗
3. 10.1126/sciadv.150033010.1126/sciadv.1500330 ↗
4. 10.1039/D0EE01277G10.1039/D0EE01277G ↗
5. 10.1002/anie.20211766110.1002/anie.202117661 ↗
6. 10.3866/PKU.WHXB20200501310.3866/PKU.WHXB202005013 ↗
7. 10.1021/acs.chemrev.0c0076710.1021/acs.chemrev.0c00767 ↗
8. 10.1021/cr500192f10.1021/cr500192f ↗
9. 10.31635/ccschem.020.20200050710.31635/ccschem.020.202000507 ↗
10. 10.1039/C6CS00776G10.1039/C6CS00776G ↗
11. 10.1002/inf2.1223510.1002/inf2.12235 ↗
12. 10.1002/adma.20160192510.1002/adma.201601925 ↗
13. 10.1038/s41467-021-23132-w10.1038/s41467-021-23132-w ↗
14. 10.1007/s40195-020-01001-710.1007/s40195-020-01001-7 ↗
15. 10.1021/acs.iecr.9b0553410.1021/acs.iecr.9b05534 ↗
16. 10.1149/1945-7111/abf9bf10.1149/1945-7111/abf9bf ↗
17. 10.1016/j.cej.2020.12809710.1016/j.cej.2020.128097 ↗
18. 10.1002/anie.20191210110.1002/anie.201912101 ↗
19. 10.1002/aenm.20180397810.1002/aenm.201803978 ↗
20. 10.1002/anie.20180192310.1002/anie.201801923 ↗
21. 10.1038/s41467-020-17290-610.1038/s41467-020-17290-6 ↗
22. 10.1007/s12598-020-01403-710.1007/s12598-020-01403-7 ↗
23. 10.1039/C9CS00846B10.1039/C9CS00846B ↗
24. 10.1002/smtd.20180022110.1002/smtd.201800221 ↗
25. 10.1002/adma.20190592310.1002/adma.201905923 ↗
26. 10.1016/j.scib.2020.01.01810.1016/j.scib.2020.01.018 ↗
27. 10.1002/smtd.20180025310.1002/smtd.201800253 ↗
28. 10.1002/adma.20170043110.1002/adma.201700431 ↗
29. 10.1016/j.cej.2019.12365010.1016/j.cej.2019.123650 ↗
30. 10.1002/adfm.20140056110.1002/adfm.201400561 ↗
31. 10.1038/s41467-019-08359-y10.1038/s41467-019-08359-y ↗
32. 10.1038/ncomms1030810.1038/ncomms10308 ↗
33. 10.1016/j.nanoen.2018.02.05310.1016/j.nanoen.2018.02.053 ↗
34. 10.1016/j.cej.2020.12629110.1016/j.cej.2020.126291 ↗
35. 10.1002/advs.20180068010.1002/advs.201800680 ↗
36. 10.1016/j.nanoen.2020.10565910.1016/j.nanoen.2020.105659 ↗
37. 10.1039/C8TA10624J10.1039/C8TA10624J ↗
38. 10.1039/C5TA05939A10.1039/C5TA05939A ↗
39. 10.1002/aenm.20190205610.1002/aenm.201902056 ↗
40. 10.1002/smll.20210201010.1002/smll.202102010 ↗
41. 10.1002/inf2.1218410.1002/inf2.12184 ↗
42. 10.1016/j.cej.2017.09.01210.1016/j.cej.2017.09.012 ↗
43. 10.1021/acs.chemmater.5b0036110.1021/acs.chemmater.5b00361 ↗
44. 10.1002/adma.20180476610.1002/adma.201804766 ↗
45. 10.1016/j.cclet.2020.04.02110.1016/j.cclet.2020.04.021 ↗
46. 10.1002/adma.20170196810.1002/adma.201701968 ↗
47. 10.1002/aenm.20170250410.1002/aenm.201702504 ↗
48. 10.1002/anie.20211255010.1002/anie.202112550 ↗