Study of the Structural and Switching Properties of Ga2Te5 Crystals
Source abstract
Abstract
The structural parameters of Ga2Te5 crystals grown using the Bridgman method have been studied. X-ray diffaction analysis revealed the crystal structure of Ga2Te5 in the tetragonal phase. In addition, crystalline size, strain, and dislocation density were calculated with the Sherrer model and the Williamson-Hall (W-H) model. The switching effect was achieved for Ga2Te5 crystals. Furthermore, the effect of temperature and light intensity was studied for Ga2Te5 crystals. The results show that temperature and light intensity affect switching characteristics such as threshold current (ith), threshold voltage (Vth), threshold power (Pth), and resistance ratios from a high-resistance OFF state to a low-resistance ON state (ROFF/RON).
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Solid-state spectroscopy and crystallography · Advanced Semiconductor Detectors and Materials · Phase-change materials and chalcogenides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (32)
Show source-provided references
1. Integrable lithium solid-state microbatteries10.1016/0378-7753(89)80189-2 ↗
2. Electrical and optical properties of single crystal In2Te3 and Ga2Te310.1016/0038-1098(84)90055-3 ↗
3. Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap10.1007/s12274-014-0430-2 ↗
4. Photoconductivity, low-temperature conductivity, and magnetoresistance studies on the layered semiconductor GaTe10.1103/PhysRevB.63.235321 ↗
5. Systeme gallium-tellure: diagrammes de phases, étude structurale de GaTe, Ga2Te5 et de Ga6SnTe10’10.1016/0022-4596(79)90082-3 ↗
6. Structural and electrical properties of Ga-Te systems under high pressure10.1088/1674-1056/28/5/056104 ↗
7. Some physical properties of Ga2Te5 single crystals10.1016/S0921-4526(03)00388-0 ↗
8. Die pentatelluride M2Te5 (M = Al, Ga, In): polymorphie, strukturbeziehungen und homogenitätsbereiche10.1002/zaac.19966220611 ↗
9. Square-planar-coordinated tellurides - The electronic structures of Re2Te5, Ga2Te5 and K2SnTe510.1016/0038-1098(84)90771-3 ↗
10. Thermoelectric properties of P-Type Ga2Te5 based compounds10.1016/S1875-5372(12)60046-0 ↗
11. Investigation of switching phenomenon of Se75Te25−xGax amorphous system10.1016/j.jallcom.2011.03.016 ↗
12. Growth and switching effect with memory in binary compound dithallium tritelleride single crystal
13. Negative-differential-resistance effects in TlInTe2 ternary semiconductor10.1016/j.jallcom.2009.04.142 ↗
14. Electrical switching in the chalcogenide As60− xTe40Cux glasses’10.1016/j.physb.2004.01.155 ↗
15. Electrothermal investigation of the switching effect in p-type TllnSe2, TllnTe2, and TIGaTe2 chain chalcogenide semiconductors10.1007/BF02659902 ↗
16. Reproducible hysteresis and resistive switching in metal-CuxO-metal heterostructures10.1063/1.2436720 ↗
17. Reproducible unipolar resistance switching in stoichiometric ZrO2ZrO2 films’10.1063/1.2734900 ↗
18. Mechanism of current hysteresis in reduced rutile TiO2 crystals for resistive memory’10.1007/s00339-008-4782-x ↗
19. Elements of X-ray diffraction by BD cullity international union of crystallography10.1107/S0567739479000917 ↗
20. Study of structural and optical properties Of Tl2Te3 thermally evaporation thin films10.1149/2162-8777/ac7d72 ↗
21. The effect of thickness on the structural and optical properties of nano Ge-Te-Cu films10.1016/j.rinp.2018.07.023 ↗
22. Annealing temperature effect to optimize the optical properties of SnS thin films10.1140/epjp/s13360-021-01676-6 ↗
23. Controlled morphological and physical properties of ZnO nanostructures synthesized by domestic microwave route10.1016/j.matchemphys.2020.123885 ↗
24. Williamson-hall analysis in estimation of lattice strain in nanometer-sized ZnO particles10.1186/2251-7235-6-6 ↗
25. Estimation of lattice strain in ZnO nanoparticles: X-ray peak profile analysis10.1007/s40094-014-0141-9 ↗
26. X-ray peak broadening analysis in ZnO nanoparticles10.1016/j.ssc.2009.07.043 ↗
27. Young’s modulus surface and Poisson’s ratio curve for tetragonal crystals10.1088/1674-1056/17/5/006 ↗
28. Three-dimensional ZnO hierarchical nanostructures: solution phase synthesis and applications’10.3390/ma10111304 ↗
29. A compact model of ovonic threshold switch combining thermal dissipation effect10.3389/fnins.2021.635264 ↗
30. Simultaneous implementation of resistive switching and rectifying effects in a metal-organic framework with switched hydrogen bond pathway10.1126/sciadv.aaw4515 ↗
31. Investigation of the switching phenomena in Ga2Te310.1016/j.jcrysgro.2005.01.106 ↗
32. Switching effect with memory in thallium sulfide single crystals10.1002/crat.2170251017 ↗