Anelastic Internal Friction and Mechanical Spectroscopy of SiO₂/Si Wafers

In this work, after electron irradiation and X-ray, the outcomes of the evaluation dynamic characteristics of interstitial atoms Si _j , vacancy V, and O-complexes were evaluated to account for the annealing conditions to derive specific structural defects in the SiO₂/Si wafer. A non-destructive method, which allows the determination of the internal friction difference ΔQ ⁻¹ /Q ⁻¹ ₀ of the elastic vibration of structural defects of dislocations with density N _D and the depth of the broken layer h _b , is offered for the SiO₂/Si wafer. The method was developed, the installation was designed and manufactured for the excitation and registration of damped bending resonant oscillations in a SiO₂/Si disc-shaped wafer with a thickness h _SiO2 ≈ 100 nm, h _is = 300 ÷ 500 × 10³ nm, and diameter D = 60 ÷ 100 × 10⁻³ m to measure the structurally sensitive internal friction Q ⁻¹ in vacuum P ≈ 10⁻² Pa. Measurement of the internal friction background Q ⁻¹ ₀ at harmonic frequencies f ₀ and f ₂ allowed us to experimentally determine the nodal lines of the oscillating disks.