Deep Electron and Hole Traps in Electron-Irradiated Green GaN/InGaN Light Emitting Diodes

In-Hwan Lee; A. Y. Polyakov; N. B. Smirnov; I. V. Shchemerov; Tae-Hoon Chung; P. B. Lagov; R. A. Zinov'ev; S. J. Pearton

doi:10.1149/2.0131710jss

journal article·2017

Deep Electron and Hole Traps in Electron-Irradiated Green GaN/InGaN Light Emitting Diodes

In-Hwan Lee, A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, Tae-Hoon Chung, P. B. Lagov, R. A. Zinov'ev, S. J. Pearton

ECS Journal of Solid State Science and Technology· Volume 6· Issue 10

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Source abstract

Abstract

Deep electron and hole trap spectra and electroluminescence (EL) efficiency of green multi-quantum-well (MQW) GaN/InGaN light emitting diodes were measured before and after 6 MeV electron irradiation. Starting with a fluence of 5 × 1015 cm−2, electron irradiation increased the concentration of existing electron traps with levels at Ec−0.5 eV and introduced new electron traps with levels near Ec−1 eV. The latter are the well known radiation defects formed in the GaN barriers of the GaN/InGaN MQW region. The degradation of the EL efficiency after irradiation correlates with changes of the Ec−0.5 eV and Ec−1 eV electron trap density, suggesting these are effective non-radiative recombination centers. By sharp contrast, the concentration of the dominant hole traps with levels near Ev+0.45 eV decreased after, which eliminates these from the role of Shockley-Read-Hall defects actively participating in recombination.

Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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