Chemical Mechanical Planarization of Carbon-Doped Amorphous Ge ₂ Sb ₂ Te ₅ Film with Hydrogen Peroxide as Oxidizer in Alkaline Slurry

In this study, we investigate the chemical mechanical planarization (CMP), static dissolution and electrochemical performace of amorphous carbon-doped Ge ₂ Sb ₂ Te ₅ (GSTC) film in alkaline slurry with H ₂ O ₂ employed as an oxidizer. It was found that the material removal rate (MRR) of GSTC first increase and then slowly decrease with the increase in concentration of H ₂ O ₂ . The surface quality of the GSTC post-CMP shows the same trend. To understand the mechanism of GSTC CMP with H ₂ O ₂ , the Energy Dispersive Spectrometer on the surface of the GSTC post-CMP, Inductively Coupled Plasma of the solution after static dissolution, potentiodynamic polarization curve and X-ray photoelectron spectroscope are measured and it is found that the change in carbon state is an important factor for the CMP of GSTC. Finally, a possible removal mechanism of GSTC in different concentrations of H ₂ O ₂ in the alkaline slurry is proposed.