Low-Temperature Annealing of CdS:In/Cu₂ZnSn(S,Se)₄ Heterojunction Boosting 14.5% Efficiency Kesterite Solar Cells

Jianming Xu; Changcheng Cui; Dongxing Kou; Zucheng Wu; Wenhui Zhou; Zhengji Zhou; Shengjie Yuan; Yafang Qi; Yuena Meng; Litao Han; Sixin Wu

doi:10.1021/acsenergylett.4c02118

journal article·2024-10-11

Low-Temperature Annealing of CdS:In/Cu₂ZnSn(S,Se)₄ Heterojunction Boosting 14.5% Efficiency Kesterite Solar Cells

Jianming Xu, Changcheng Cui, Dongxing Kou, Zucheng Wu, Wenhui Zhou, Zhengji Zhou, Shengjie Yuan, Yafang Qi, Yuena Meng, Litao Han, Sixin Wu

ACS Energy Letters· Volume 9· Issue 10

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Source abstract

Abstract

The persistent challenge in kesterite solar cells is the low open-circuit voltage ( V oc ) and fill factor (FF) due to nonradiative recombination at the CdS/Cu 2 ZnSn(S,Se) 4 (CZTSSe) interface. Here we demonstrate a convenient combination of low-temperature annealing and In doping within the buffer layer to establish an electrically benign high-quality CdS:In/CZTSSe heterojunction. The low-temperature annealing facilitates the migration of Cu, Zn, and Sn impurity elements from the buffer layer to the absorber side, improving lattice match and reducing detrimental defects and the conduction band offset (CBO) barrier involving large recombination losses. The In doping boosts the donor concentration and crystallinity of the buffer layer, thereby improving the electron transport and extraction processes. Consequently, the CdS:In device achieves the highest efficiency of 14.5% with the V oc,deficit decreasing from 348 mV to 287 mV and the FF increasing from 66.6% to 70.3%, promising a significant efficiency leap for CZTSSe solar cells.

Source: openalex_inverted_index · Quality: baseline

Research context

Materials processing

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Lab for Special Functional Materials, Ministry of Education, National & Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, School of Nanoscience and Materials Engineering, Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China

Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, China

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Shandong Energy Institute, Qingdao 266101, China

Funding

Science and Technology Innovation Talents in Universities of Henan Province · National Natural Science Foundation of China · Zhongyuan Thousand Talents Program of Henan Province

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