Flexoelectricity‐Driven Self‐Powered Photodetectors for Information Transmission and Image Processing
Source abstract
Abstract
ABSTRACT In the digital information age, self‐powered photodetectors are crucial for meeting the demands of high‐density integration and low power consumption. The flexoelectric effect provides a mechanical approach for the development of high‐efficiency and low‐energy consumption photoelectronic devices. Here, an asymmetric suspended structure model is proposed by taking advantage of the inherent mechanical flexibility of 2D materials. The asymmetric transverse flexoelectric polarization field formed internally enables to have excellent self‐powered photodetection capabilities in the visible to near‐infrared range. The device demonstrates excellent photoelectric performance ( R ∼ 6 A W −1 ) and ultra‐weak light detection capability ( P = 1.5 ). Moreover, the coupling mechanism between photoelectric and flexoelectric effects has been elucidated through kelvin probe force microscopy (KPFM) and first‐principles calculations. In particular, the device achieved stable information transmission and image processing under weak light conditions. The visual gain has been enhanced by more than two orders of magnitude. This research result highlights the potential applications of the flexoelectric effect and lays a solid foundation for the design and integrated development of high‐performance photoelectronic devices.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Nonlocal and gradient elasticity in micro/nano structures · Innovative Energy Harvesting Technologies · Mechanical and Optical Resonators
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Technical Center for Multifunctional Magneto‐Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics East China Normal University Shanghai China
School of Communication and Electronic Engineering East China Normal University Shanghai China
Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan Shanxi China
Funding
National Natural Science Foundation of China
References (61)
Show source-provided references
1. 10.1002/adma.20231070410.1002/adma.202310704 ↗
2. 10.1002/adfm.20242187010.1002/adfm.202421870 ↗
3. 10.1016/j.matt.2025.10199810.1016/j.matt.2025.101998 ↗
4. 10.1002/adma.20241377110.1002/adma.202413771 ↗
5. 10.1002/adma.20241693510.1002/adma.202416935 ↗
6. 10.1016/j.mser.2024.10088510.1016/j.mser.2024.100885 ↗
7. 10.1063/5.024435910.1063/5.0244359 ↗
8. 10.1021/acsnano.4c0817610.1021/acsnano.4c08176 ↗
9. 10.1038/s41565-024-01831-x10.1038/s41565-024-01831-x ↗
10. 10.1002/adfm.20242230410.1002/adfm.202422304 ↗
11. 10.1002/adma.20240158510.1002/adma.202401585 ↗
12. Design Strategies for High‐Performance Functional Polymer Materials
13. 10.1038/s41467-019-11328-010.1038/s41467-019-11328-0 ↗
14. 10.1016/j.mser.2025.10094610.1016/j.mser.2025.100946 ↗
15. 10.1002/adfm.20231626710.1002/adfm.202316267 ↗
16. 10.1002/adfm.20240071210.1002/adfm.202400712 ↗
17. 10.1002/adfm.20231554310.1002/adfm.202315543 ↗
18. 10.1016/j.mattod.2024.10.00210.1016/j.mattod.2024.10.002 ↗
19. 10.1016/j.nanoen.2021.10669410.1016/j.nanoen.2021.106694 ↗
20. 10.1002/smll.20220577810.1002/smll.202205778 ↗
21. 10.1038/nature1379210.1038/nature13792 ↗
22. 10.1038/s41565-017-0022-x10.1038/s41565-017-0022-x ↗
23. Strong Piezoelectricity in Single‐Layer MoS2${\rm MoS}_2$ Deposited on SiO2${\rm SiO}_2$10.1038/ncomms8572 ↗
24. 10.1103/PhysRevB.110.01410210.1103/PhysRevB.110.014102 ↗
25. 10.1039/D1MH00024A10.1039/D1MH00024A ↗
26. 10.1038/ncomms1084310.1038/ncomms10843 ↗
27. 10.1038/s41467-023-37892-010.1038/s41467-023-37892-0 ↗
28. 10.1007/s40820-024-01553-810.1007/s40820-024-01553-8 ↗
29. 10.1021/acsami.5c1044610.1021/acsami.5c10446 ↗
30. 10.1002/adfm.20240190310.1002/adfm.202401903 ↗
31. 10.1002/smll.20240256110.1002/smll.202402561 ↗
32. 10.1038/s41467-024-48892-z10.1038/s41467-024-48892-z ↗
33. 10.1016/j.matt.2022.11.02210.1016/j.matt.2022.11.022 ↗
34. 10.1038/s41565-020-0700-y10.1038/s41565-020-0700-y ↗
35. 10.1126/sciadv.abq123210.1126/sciadv.abq1232 ↗
36. 10.1038/s41467-022-32062-010.1038/s41467-022-32062-0 ↗
37. 10.1039/D2MH00984F10.1039/D2MH00984F ↗
38. 10.1002/adma.20230576610.1002/adma.202305766 ↗
39. 10.1002/adfm.20231599110.1002/adfm.202315991 ↗
40. 10.1038/nature1976110.1038/nature19761 ↗
41. 10.1021/acs.nanolett.2c0013010.1021/acs.nanolett.2c00130 ↗
42. 10.1002/adfm.20240793110.1002/adfm.202407931 ↗
43. 10.1038/s41377-024-01523-010.1038/s41377-024-01523-0 ↗
44. 10.1021/acs.nanolett.4c0117310.1021/acs.nanolett.4c01173 ↗
45. 10.1021/acsnano.2c0298610.1021/acsnano.2c02986 ↗
46. 10.1016/j.nanoen.2023.10889110.1016/j.nanoen.2023.108891 ↗
47. 10.1021/acsnano.0c0432910.1021/acsnano.0c04329 ↗
48. 10.1016/j.cej.2023.14683810.1016/j.cej.2023.146838 ↗
49. 10.1016/j.cej.2024.15393710.1016/j.cej.2024.153937 ↗
50. 10.1002/inf2.1227410.1002/inf2.12274 ↗
51. 10.1002/inf2.1209310.1002/inf2.12093 ↗
52. 10.1002/adfm.20190390710.1002/adfm.201903907 ↗
53. 10.1016/j.mtphys.2022.10086710.1016/j.mtphys.2022.100867 ↗
54. 10.1002/smll.20231160610.1002/smll.202311606 ↗
55. 10.1002/smll.20220044510.1002/smll.202200445 ↗
56. 10.1021/acsnano.4c1229810.1021/acsnano.4c12298 ↗
57. 10.1038/s41467-020-16465-510.1038/s41467-020-16465-5 ↗
58. 10.1103/PhysRevLett.122.14800110.1103/PhysRevLett.122.148001 ↗
59. 10.1002/adfm.20240990610.1002/adfm.202409906 ↗
60. 10.1109/COMST.2019.291334810.1109/COMST.2019.2913348 ↗
61. 10.1002/adfm.20230694110.1002/adfm.202306941 ↗