journal article·2026-01

Low‐Temperature Transferred Nanostructured 2D Transition Metal Dichalcogenides by a Direct Laser Contact Sublimation Transfer Method

Tzu‐Yi Yang, Paul Albert Sino, Yu‐Ren Peng, Chi‐Chieh Kao, Shu‐Chi Wu, Yu‐Heng Hong, Hao‐Chung Kuo, Wei‐Hsuan Hung, Yu‐Lun Chueh

Advanced Functional Materials· Volume 36· Issue 4
Publisher page

Abstract

Abstract Here, a direct laser contact sublimation transfer (DLCST) method is proposed wherein an indirect laser heating process evaporates 2D films prepared by a conventional evaporator as target materials from donor substrates and regrows them on receiver substrates. Through this method, different 2D materials, including crystalline SnSe x , NiSe x , and SbSe x, transferred onto receiver substrates have been successfully demonstrated. To fully understand the transfer mechanism and applications, the SnSe x is selected as the target material. By precisely controlling the laser intensity and exposure time during the DLCST process, controllable morphologies from nanosheets and nanorods to nanoislands with compositions of SnSe/SnSe 2 are verified. Finally, through this method, SnSe/SnSe 2 nanosheets are selected to transfer to various flexible substrates, and the grown SnSe/SnSe 2 nanosheets on copper foil (SnSe/SnSe 2 nanosheet@copper) are applied to Na‐ion battery anodes and photodetectors. The SnSe/SnSe 2 nanosheet@copper electrodes exhibit a stable cycling capacity, as evidenced by a capacity retention of 82 % (215 mAh g −1 ) over 100 cycles at 1 Ag −1 . Additionally, the photodetector demonstrates a rapid and robust photoresponse to 515 nm laser radiation, yielding a photocurrent peak of ≈5.6 µA within 0.115 s.
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Research context

OpenAlex topics: 2D Materials and Applications · Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering National Tsing Hua University Hsinchu 30013 Taiwan

Institute Materials Science and Engineering National Central University No. 300 Jhong‐da Rd, Jhongli Taoyuan 320 Taiwan

Department of Photonics College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu 30010 Taiwan

Semiconductor Research Center Hon Hai Research Institute Taipei 11492 Taiwan

High Entropy Materials Center National Tsing Hua University No. 101, Sec. 2, Guangfu Rd., East Dist. Hsinchu City 300 Taiwan

College of Semiconductor Research National Tsing‐Hua University Hsinchu 30013 Taiwan

Department of Materials Science and Engineering Korea University Seoul 02841 Republic of Korea

Department of Physics National Sun Yat‐Sen University Kaohsiung 80424 Taiwan

Funding

National Science and Technology Council

References (44)

Show source-provided references
1. 10.1016/j.vacuum.2021.11020510.1016/j.vacuum.2021.110205 ↗
2. 10.1002/smll.20220739410.1002/smll.202207394 ↗
3. 10.1021/acsnano.0c0029610.1021/acsnano.0c00296 ↗
4. 10.1002/pssr.20220047610.1002/pssr.202200476 ↗
5. 10.1002/smll.20210538310.1002/smll.202105383 ↗
6. 10.1021/acs.chemrev.3c0030210.1021/acs.chemrev.3c00302 ↗
7. 10.1021/acs.chemrev.7b0053610.1021/acs.chemrev.7b00536 ↗
8. 10.1038/s41467-023-35983-610.1038/s41467-023-35983-6 ↗
9. 10.1038/s41598-021-81829-w10.1038/s41598-021-81829-w ↗
10. 10.1016/j.mtphys.2024.10153610.1016/j.mtphys.2024.101536 ↗
11. 10.1039/D0NR06062C10.1039/D0NR06062C ↗
12. 10.1016/j.actamat.2020.09.01510.1016/j.actamat.2020.09.015 ↗
13. 10.2351/7.000071810.2351/7.0000718 ↗
14. 10.1016/j.tsf.2004.06.19410.1016/j.tsf.2004.06.194 ↗
15. 10.1103/PhysRevB.23.292310.1103/PhysRevB.23.2923 ↗
16. 10.1039/C9EE02324K10.1039/C9EE02324K ↗
17. 10.1016/S0169-4332(03)00153-310.1016/S0169-4332(03)00153-3 ↗
18. 10.1002/pssc.20077951910.1002/pssc.200779519 ↗
19. 10.1016/j.apsusc.2020.14861510.1016/j.apsusc.2020.148615 ↗
20. 10.1016/0168-583X(96)00078-X10.1016/0168-583X(96)00078-X ↗
21. 10.3390/nano1203030610.3390/nano12030306 ↗
22. 10.1016/S0168-583X(01)00404-910.1016/S0168-583X(01)00404-9 ↗
23. 10.1364/OE.55376710.1364/OE.553767 ↗
24. 10.1021/acs.inorgchem.2c0408310.1021/acs.inorgchem.2c04083 ↗
25. 10.1002/advs.20220467110.1002/advs.202204671 ↗
26. 10.1039/C4CE01868K10.1039/C4CE01868K ↗
27. 10.1039/D0RA08360G10.1039/D0RA08360G ↗
28. 10.1088/0953-8984/12/24/32010.1088/0953-8984/12/24/320 ↗
29. 10.1016/j.jcrysgro.2009.08.00510.1016/j.jcrysgro.2009.08.005 ↗
30. 10.1038/s41598-017-02285-z10.1038/s41598-017-02285-z ↗
31. 10.1021/acs.jpcc.1c0504710.1021/acs.jpcc.1c05047 ↗
32. 10.1039/D0TA01783C10.1039/D0TA01783C ↗
33. 10.1002/chem.20190533710.1002/chem.201905337 ↗
34. 10.1021/acsami.2c1976210.1021/acsami.2c19762 ↗
35. 10.1186/s11671-019-2850-010.1186/s11671-019-2850-0 ↗
36. 10.1039/D0CE00819B10.1039/D0CE00819B ↗
37. 10.1021/acsaem.3c0057610.1021/acsaem.3c00576 ↗
38. 10.1021/acsami.1c2281710.1021/acsami.1c22817 ↗
39. 10.1039/C4CC06106C10.1039/C4CC06106C ↗
40. 10.1002/advs.20170060210.1002/advs.201700602 ↗
41. 10.1039/C8TA02695E10.1039/C8TA02695E ↗
42. 10.1038/s41467-019-08506-510.1038/s41467-019-08506-5 ↗
43. Diksha · Mater. Today: Proc. · 2023
44. 10.1021/acsnano.0c0126410.1021/acsnano.0c01264 ↗