DataVXAdvanced Functional MaterialsPaper
journal article·2025-05Open access

Gate‐Tunable Spin‐To‐Charge Conversion in Topological Insulator‐Magnetic Insulator Heterostructures at Room Temperature (Adv. Funct. Mater. 20/2025)

Wenxuan Sun, Yequan Chen, Ruijie Xu, Wenzhuo Zhuang, Di Wang, Long Liu, Anke Song, Guozhong Xing, Yongbing Xu, Rong Zhang, Cui‐Zu Chang, Xuefeng Wang

Advanced Functional Materials· Volume 35· Issue 20
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Source abstract

Abstract

Electrical Gating In article number 2501880, Guozhong Xing, Xuefeng Wang, and co-workers report the electrically gated spin-to-charge conversion in topological insulator-magnetic insulator heterostructures at room temperature. Electrical gating can boost the spin Hall angle from ∼0.76 to ∼0.9 as the Fermi level crosses topological surface states. These findings highlight the electrical gating of spin-to-charge conversion for energy-efficient spintronic devices.
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Research context

OpenAlex topics: Magnetic properties of thin films · Graphene research and applications · Micro and Nano Robotics

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Affiliations

Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials State Key Laboratory of Spintronics Devices and Technologies School of Electronic Science and Engineering Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 China

Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

University of Chinese Academy of Sciences Beijing 100049 China

Department of Physics Xiamen University Xiamen 361005 China

Department of Physics The Pennsylvania State University University Park PA 16802 USA

Atom Manufacturing Institute Nanjing 211806 China

References

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