Origin of Hole‐Trapping States in Solution‐Processed Copper(I) Thiocyanate and Defect‐Healing by I2 Doping (Adv. Funct. Mater. 25/2023)
Source abstract
Abstract
Hole Transports In article number 2209504, Pichaya Pattanasattayavong and co-workers, report that X-ray absorption spectroscopy reveals the incomplete coordination environment around Cu(I) centers in CuSCN which can be associated with SCN− vacancies acting as hole-trapping states. Doping with an optimal amount of I2 leads to defect-healing and a drastic improvement in hole transport.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Copper Interconnects and Reliability
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering School of Molecular Science and Engineering Vidyasirimedhi Institute of Science and Technology (VISTEC) Rayong 21210 Thailand
Synchrotron Light Research Institute (Public Organization) 111 University Avenue, Muang Nakhon Ratchasima 30000 Thailand
Department of Physics Faculty of Science Kasetsart University Bangkok 10900 Thailand
References
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