Visualizing In‐Plane Junctions in Nitrogen‐Doped Graphene (Adv. Funct. Mater. 47/2022)
Source abstract
Abstract
Scanning Tunneling Microscopy In article number 2208048, Jérôme Lagoute and co-workers report on the realization and properties of in-plane junctions in nitrogen doped graphene. Using scanning tunneling microscopy they visualize the spatial variation of the doping level along the junctions. The width of the transition region is found to be around 7 nm, which corresponds to a sharp junction regime.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications
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Affiliations
Laboratoire Matériaux et Phénomènes Quantiques CNRS‐Université Paris Cité 10 rue Alice Domon et Léonie Duquet 75205 Paris Cedex 13 France
Center for Nanostructured Graphene Department of Physics Technical University of Denmark, Kongens DK‐2800 Lyngby Denmark
SPEC CEA CNRS Université Paris‐Saclay CEA Saclay 91191 Gif‐sur‐Yvette Cedex France
References
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