journal article·2022-11Open access

Visualizing In‐Plane Junctions in Nitrogen‐Doped Graphene (Adv. Funct. Mater. 47/2022)

Mehdi Bouatou, Cyril Chacon, Aleksander Bach Lorentzen, Huu Thoai Ngo, Yann Girard, Vincent Repain, Amandine Bellec, Sylvie Rousset, Mads Brandbyge, Yannick J. Dappe, Jérôme Lagoute

Advanced Functional Materials· Volume 32· Issue 47

Abstract

Scanning Tunneling Microscopy In article number 2208048, Jérôme Lagoute and co-workers report on the realization and properties of in-plane junctions in nitrogen doped graphene. Using scanning tunneling microscopy they visualize the spatial variation of the doping level along the junctions. The width of the transition region is found to be around 7 nm, which corresponds to a sharp junction regime.
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Research context

OpenAlex topics: Graphene research and applications

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Affiliations

Laboratoire Matériaux et Phénomènes Quantiques CNRS‐Université Paris Cité 10 rue Alice Domon et Léonie Duquet 75205 Paris Cedex 13 France

Center for Nanostructured Graphene Department of Physics Technical University of Denmark, Kongens DK‐2800 Lyngby Denmark

SPEC CEA CNRS Université Paris‐Saclay CEA Saclay 91191 Gif‐sur‐Yvette Cedex France

References

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