journal article·2022-09-25Open access

Monoclinic tungsten trioxide (WO3) thin films using spraying pyrolysis: electrical, structural and stoichiometric ratio at different molarity

Laser Science and Technology Branch, University of Technology - Iraq, Baghdad, Iraq, F. A. Mohamed, E. T. Salim, Laser Science and Technology Branch, University of Technology - Iraq, Baghdad, Iraq, A. I. Hassan, Laser Science and Technology Branch, University of Technology - Iraq, Baghdad, Iraq

Abstract

Chemical spraying pyrolysis technique has used to deposit tungsten oxide on glass substrates with varied concentrations ranging from 50 to 90 mM at the optimum deposition temperature of 350 ͦ C. All films exhibit a monoclinic phase, with highest structural properties at a molar concentration of 80 mM. Miller's plain at (200) was found to be the most dominant in all films. The film has a fibrous network with an increasing diameter with increasing concentration, according to FE-SEM. The EDX revealed that the ratio of W/O at the optimum concentration (80mM) was 2.62, with a stoichiometric of 68.6%. The rate of grain size grew with concentration, whereas the rate of roughness reduced with concentration, according to atomic force microscopy investigations of thin films. The mean electrical conductivity increased gradually with concentration up to 4.176 x10-8 S/cm-1 and subsequently declined to 4.542x 10-10 S/cm-1 , while the activation energy climbed gradually with concentration up to reach 0.298eV before decreasing significantly
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Research context

OpenAlex topics: Transition Metal Oxide Nanomaterials · ZnO doping and properties · Semiconductor materials and interfaces

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References (21)

Show source-provided references
1. [1] S. B. Ali et al., Journal of Renewable Materials, vol. 10, no 11, pp. 2819-2834, 2022; https://doi. 10.32604/jrm.2022.02160910.32604/jrm.2022.021609 ↗
2. [2] M. H. Mohsin et al., Journal of Renewable Materials, vol. 9, no 9, pp. 1519-1530, 2021; https://doi.10.32604/jrm.2021.015465.10.32604/jrm.2021.015465 ↗
3. [3] S Basel et al., AIP Conference Proceedingsm vol. 2213, no 1, p. 020228, 2020; https://doi.org/10.1063/5.000018510.1063/5.0000185 ↗
4. [4] K. Sasikumar, R. Bharathikannan, M. Raja, Silicon, vol. 11, no. 1, pp. 137-143, 2018; https://doi.org/10.1007/s12633-018-9938-510.1007/s12633-018-9938-5 ↗
5. [5] J. Kim et al., ACS applied materials & interfaces, vol. 8, no. 14, pp. 9499-9505, 2016; https://doi.org/10.1021/acsami.5b1178110.1021/acsami.5b11781 ↗
6. [6] N. N. K. Reddy, H. S. Akkera, M. C. Sekhar, S. Uthanna, Silicon, vol. 11, no. 1, pp. 159-164, 2019; https://doi.org/10.1007/s12633-018-9840-110.1007/s12633-018-9840-1 ↗
7. [7] G. M. Kumar et al., RSC advances, vol. 6, no. 63, pp. 57941-57947, 2016; https://doi.org/10.1039/C6RA10644G10.1039/C6RA10644G ↗
8. [8] J. Semple, D. G. Georgiadou, G. Wyatt-Moon, G. Gelinck, T. D. Anthopoulos, Semiconductor Science and Technology, vol. 32, no. 12, p. 123002, 2017; https://doi.org/10.1088/1361- 6641/aa89ce10.1088/1361-6641/aa89ce ↗
9. [9] J. Tsao et al., Advanced Electronic Materials, vol. 4, no. 1, p. 1600501, 2018; https://doi.org/10.1002/aelm.20160050110.1002/aelm.201600501 ↗
10. [10] E.T. Salim, F.G. Khalid, M.A. Fakhri, R.S. Mahmood, Materials Today: Proceedings, vol. 42, no 5, pp. 2422-2425, 2021; https://doi.org/10.1016/j.matpr.2020.12.55110.1016/j.matpr.2020.12.551 ↗
11. [11] D. Faisal, W.K. Kalef, E.T. Salim, F.H. Alsultany, Journal of Ovonic Research, vol. 18, no 2, pp. 205-212, 2022; https://doi.org/10.15251/JOR.2022.182.20510.15251/JOR.2022.182.205 ↗
12. [12] Y.N. Jurn et al., Key Engineering Materials, vol. 701, pp. 57-66, 2016; https://doi.10.4028/www.scientific.net/KEM.701.5710.4028/www.scientific.net/KEM.701.57 ↗
13. [13] M. A.Fakhri et al., Journal of Physics and Chemistry of Solids, vol. 131, pp. 180-188, 2019. https://doi.org/10.1016/j.jpcs.2019.03.03310.1016/j.jpcs.2019.03.033 ↗
14. [14] A. Kadhim et al., The Scientific World Journal, vol. 2014, Article ID, p. 490951, 6 pages, 2014; http://dx.doi.org/10.1155/2014/49095110.1155/2014/490951 ↗
15. [15] E. Monroy, F. Omns, F. Calle, Semiconductor Science and Technology, vol. 18, no. 4, pp. R33-R51, 2003; https://doi.org/10.1088/0268-1242/18/4/20110.1088/0268-1242/18/4/201 ↗
16. [16] J. B. C. a. R. W. Johnson, Solid-State Electronic, vol. 39 no. 10, pp. 1409-1422, 1996; https://doi.org/10.1016/0038-1101(96)00045-710.1016/0038-1101(96)00045-7 ↗
17. [17] S. M. Max N. Yoder, IEEE Transactions on Electron Devices vol. 43, no. 10, 1996; https://doi.org/10.1109/16.53680710.1109/16.536807 ↗
18. [18] C. H. Lin and C. W. Liu, Sensors vol. 10, no. 10, pp. 8797-8826, 2010; https://doi.org/10.3390/s10100879710.3390/s101008797 ↗
19. [19] C. C. Mardare, A. W. Hassel, Physica. Status Solidi A vol. 216, no. 12, pp. 1-16, 2019; https://doi.org/10.1002/pssa.20190004710.1002/pssa.201900047 ↗
20. [20] M. A Fakhri et al.,Surface Review and Letters, vol. 26, no 10, p. 1950068, 2019; https://doi.org/10.1142/S0218625X1950068910.1142/S0218625X19500689 ↗
21. [21] J. T. Yang et al., Advanced Materials, vol. 30, no. 34, p. 1801548, 2018; https://doi.org/10.1002/adma.20180154810.1002/adma.201801548 ↗