Wearable Electronics: Textile Resistance Switching Memory for Fabric Electronics (Adv. Funct. Mater. 15/2017)
Source abstract
Abstract
In article number 1605593, Cheol Seong Hwang, Mi Jung Lee, and co-workers demonstrate a new type of wearable electronic device in which resistive switching memory devices are woven into an electronic textile using a loom, which is similar to weaving normal cloth. Aluminumcoated threads with native aluminum oxide and carbon are chosen for bipolar resistive switching reactions at the interface to create conducting pathways upon applied bias.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Conducting polymers and applications
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Affiliations
School of Advanced Materials Engineering Kookmin University Seoul 136‐712 South Korea
Department of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul 151‐744 South Korea
References
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