Correction: Controlled Nucleation of GaN Nanowires Grown with Molecular Beam Epitaxy

The authors regret a mistake on page 2913, first paragraph, which says "The material in the mesas (openings >1 mm), however, has broad sub-gap luminescence centered on 2.0 eV indicating a high density of crystalline defects. [5] " Further experiments revealed that the original data showed an artifact of light reflected from a microscopy lamp, and that the spectral content changed enough that it did not subtract out perfectly for the large openings.