Temperature Dependence of Ga3+-Doped CaS:Eu2+ Phosphors

The temperature dependence of the photoluminescence spectra of Ga3+-doped CaS:Eu2+ phosphors were investigated. The results showed that at room temperature, the peak position was blue shifted by increasing the Ga3+ concentration from 0 to 0.2 mol. The peak intensity showed bandwidth broadened and emission intensity decreased with the increase of temperature. With the increasing of Ga3+ dopant, the declining rate and dilated trend aggravated. Increasing FWHMs and decreasing emission intensities can be explained in terms of thermal quenching in the configuration coordinate diagram. The formula explanation is due to the dominant electron-phonon interaction for thermal decay and bandwidth broadening.