Influence of CVD diamond growth conditions on nitrogen incorporation
Source abstract
Abstract
Abstract Nitrogen incorporation during the process of CVD diamond synthesis was studied at different growth conditions: nitrogen flow, substrate temperature, methane content. High nitrogen concentration > 1019 cm− 3 was obtained using (100)-oriented HPHT substrates. We also demonstrated the growth of the ultra-thin nitrogen doped delta layers with peak nitrogen concentration ~ 1019 cm− 3 and thickness ~ 3 nm. It is shown, that nitrogen delta doping allows the creation of high-density NV-center ensembles with nanometer-precision depth control.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Diamond and Carbon-based Materials Research · Metal and Thin Film Mechanics · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (22)
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