Deposition of diamond film on silicon and quartz substrates located near DC plasma

Abstract Deposition of diamond films on to both Si and quartz substrates was succeeded by means of locating the substrate near plasma, and their microstructures were investigated by using SEM and Raman spectroscopy. The plasma was generated by intermittent DC discharge in H 2 –CH 4 gas mixture at high gas pressure. The deposition rate of the film was remarkably increased when distance ( D ) between the substrate and the plasma (discharge electrodes) decreased. When the gas pressure ( P g ) was increased from 100 to 250 Torr, the deposition rate was extremely increased and the crystalline quality of the film was improved. The deposition rate, when P g = 200 Torr and D = 5 mm, was about 2.1 and 1.7 μm/h for Si and quartz substrate, respectively.