Charge Transport in Single‐Crystalline GaAs Nanobars: Impact of Band Bending Revealed by Terahertz Spectroscopy (Adv. Funct. Mater. 5/2022)
Source abstract
Abstract
Charge Confinement Electron motion inside nanostructures is strongly influenced by the presence of surfaces. In article number 2107403, Petr Kužel and co-workers apply time-resolved near-field and far-field terahertz spectroscopy and quantum-mechanical calculations to study the conductivity in an array of aligned high-quality GaAs nanobars. The study reveals that electrons are submitted to additional forces (band bending) close to the nanobar surfaces, which greatly enhance confinement of electrons at the picosecond timescale.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices
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Affiliations
Institute of Physics of the Czech Academy of Sciences Na Slovance 2 Prague 8 18200 Czech Republic
Institute of Physics of the Czech Academy of Sciences Cukrovarnická 10 Prague 6 16200 Czech Republic
Faculty of Mathematics and Physics Charles University Ke Karlovu 3 Prague 2 12116 Czech Republic
References
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