DataVXAdvanced Functional MaterialsPaper
journal article·2024-04Open access

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes (Adv. Funct. Mater. 15/2024)

Lukas Völkel, Dennis Braun, Melkamu Belete, Satender Kataria, Thorsten Wahlbrink, Ke Ran, Kevin Kistermann, Joachim Mayer, Stephan Menzel, Alwin Daus, Max C. Lemme

Advanced Functional Materials· Volume 34· Issue 15
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Source abstract

Abstract

Hexagonal Boron Nitride In article number 2300428, Alwin Daus, Max C. Lemme, and co-workers explore hexagonal boron nitride (h-BN) memristors for future computing. Based on temperature-dependent current-voltage analysis of Ni/h-BN/Ni threshold memristors, they suggest a bias stress-induced Ni-filament formation and self-rupture mechanism, in line with previous studies on h-BN memristors. In conclusion, a valuable method is presented that can be adopted to investigate the RS mechanism of 2D-materials-based memristors.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Graphene research and applications · Semiconductor materials and devices

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Affiliations

Chair of Electronic Devices RWTH Aachen University Otto‐Blumenthal‐Str. 2 52074 Aachen Germany

AMO GmbH Advanced Microelectronic Center Aachen Otto‐Blumenthal‐Str. 25 52074 Aachen Germany

Central Facility for Electron Microscopy (GFE) RWTH Aachen University Ahornstr. 55 52074 Aachen Germany

Ernst Ruska‐Centre for Microscopy and Spectroscopy with Electrons (ER‐C 2) Forschungszentrum Jülich 52425 Jülich Germany

Peter Gruenberg Institute (PGI‐7) Forschungszentrum Jülich GmbH and JARA‐FIT 52425 Jülich Germany

References

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