Selective Effects of the Host Matrix in Hydrogenated InGaAsN Alloys: Toward an Integrated Matrix/Defect Engineering Paradigm
Abstract
Research context
OpenAlex topics: Semiconductor materials and devices · GaN-based semiconductor devices and materials · Ga2O3 and related materials
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Affiliations
ISM‐CNR Istituto di Struttura della Materia –Consiglio Nazionale delle Ricerche Via Salaria Km 29.5 Monterotondo I‐00015 Italy
Dipartimento di Fisica and CNISM Sapienza Università di Roma Piazzale A. Moro 2 Roma I‐00185 Italy
CNR‐IFN Istituto di Fotonica e Nanotecnologie–Consiglio Nazionale delle Ricerche Via Cineto Romano, 42 Rome I‐00156 Italy
Sensors and Devices Fondazione Bruno Kessler Centre for Materials and Microsystems Micro Nano Facility Via Sommarive 18 Trento 38123 Italy
Department of Physics and Material Sciences Center Philipps University Marburg Marburg 35032 Germany
Ecole Polytechnique Fédérale de Lausanne (EPFL) Laboratory of Physics of Nanostructures Lausanne CH‐1015 Switzerland
Department of Physics Technion‐Israel Institute of Technology Haifa 32000 Israel
Funding
Consiglio Nazionale delle Ricerche