journal article·2022-01Open access

Selective Effects of the Host Matrix in Hydrogenated InGaAsN Alloys: Toward an Integrated Matrix/Defect Engineering Paradigm

Francesco Filippone, Saeed Younis, Giuseppe Mattioli, Marco Felici, Elena Blundo, Antonio Polimeni, Giorgio Pettinari, Damiano Giubertoni, Eduard Sterzer, Kerstin Volz, Dan Fekete, Eli Kapon, Aldo Amore Bonapasta

Advanced Functional Materials· Volume 32· Issue 5

Abstract

Abstract In dilute nitride InyGa1−yAs1−xNx alloys, a spatially controlled tuning of the energy gap can be realized by combining the introduction of N atoms—inducing a significant reduction of this parameter—with that of hydrogen atoms, which neutralize the effect of N. In these alloys, hydrogen forms N–H complexes in both Ga‐rich and In‐rich N environments. Here, photoluminescence measurements and thermal annealing treatments show that, surprisingly, N neutralization by H is significantly inhibited when the number of In‐N bonds increases. Density functional theory calculations account for this result and reveal an original, physical phenomenon: only in the In‐rich N environment, the InyGa1−yAs host matrix exerts a selective action on the N–H complexes by hindering the formation of the complexes more effective in the N passivation. This thoroughly overturns the usual perspective of defect‐engineering by proposing a novel paradigm where a major role pertains to the defect‐surrounding matrix.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Semiconductor materials and devices · GaN-based semiconductor devices and materials · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

ISM‐CNR Istituto di Struttura della Materia –Consiglio Nazionale delle Ricerche Via Salaria Km 29.5 Monterotondo I‐00015 Italy

Dipartimento di Fisica and CNISM Sapienza Università di Roma Piazzale A. Moro 2 Roma I‐00185 Italy

CNR‐IFN Istituto di Fotonica e Nanotecnologie–Consiglio Nazionale delle Ricerche Via Cineto Romano, 42 Rome I‐00156 Italy

Sensors and Devices Fondazione Bruno Kessler Centre for Materials and Microsystems Micro Nano Facility Via Sommarive 18 Trento 38123 Italy

Department of Physics and Material Sciences Center Philipps University Marburg Marburg 35032 Germany

Ecole Polytechnique Fédérale de Lausanne (EPFL) Laboratory of Physics of Nanostructures Lausanne CH‐1015 Switzerland

Department of Physics Technion‐Israel Institute of Technology Haifa 32000 Israel

Funding

Consiglio Nazionale delle Ricerche

References (40)

Show source-provided references
1. 10.1201/b1829610.1201/b18296 ↗
2. 10.1016/j.infrared.2018.11.00310.1016/j.infrared.2018.11.003 ↗
3. 10.1002/adma.20060048710.1002/adma.200600487 ↗
4. 10.1103/PhysRevB.66.07331310.1103/PhysRevB.66.073313 ↗
5. 10.1103/PhysRevLett.89.08640310.1103/PhysRevLett.89.086403 ↗
6. 10.1103/PhysRevLett.89.21640110.1103/PhysRevLett.89.216401 ↗
7. 10.1088/0268-1242/24/3/03300110.1088/0268-1242/24/3/033001 ↗
8. 10.1103/PhysRevB.67.12120610.1103/PhysRevB.67.121206 ↗
9. 10.1103/PhysRevB.101.20540310.1103/PhysRevB.101.205403 ↗
10. 10.1002/adma.20170545010.1002/adma.201705450 ↗
11. 10.1002/qute.20210004510.1002/qute.202100045 ↗
12. 10.1016/S0921-4526(01)00669-X10.1016/S0921-4526(01)00669-X ↗
13. 10.1088/0268-1242/30/10/10503010.1088/0268-1242/30/10/105030 ↗
14. 10.1063/1.490611110.1063/1.4906111 ↗
15. 10.1021/acs.jpcc.0c0509810.1021/acs.jpcc.0c05098 ↗
16. 10.1016/j.jcrysgro.2005.01.02010.1016/j.jcrysgro.2005.01.020 ↗
17. 10.1103/PhysRevB.64.12120310.1103/PhysRevB.64.121203 ↗
18. 10.1063/1.134581910.1063/1.1345819 ↗
19. 10.1038/nature0166510.1038/nature01665 ↗
20. 10.1021/acsaelm.9b0004110.1021/acsaelm.9b00041 ↗
21. 10.1039/C7RA02900D10.1039/C7RA02900D ↗
22. 10.1002/adfm.20150185810.1002/adfm.201501858 ↗
23. 10.1063/1.168267310.1063/1.1682673 ↗
24. 10.1063/1.220459710.1063/1.2204597 ↗
25. 10.1103/PhysRevB.68.11520210.1103/PhysRevB.68.115202 ↗
26. 10.1103/PhysRevB.72.03520810.1103/PhysRevB.72.035208 ↗
27. 10.1103/PhysRevB.72.07320210.1103/PhysRevB.72.073202 ↗
28. 10.1103/PhysRevB.77.08521310.1103/PhysRevB.77.085213 ↗
29. 10.1103/PhysRevB.81.23320110.1103/PhysRevB.81.233201 ↗
30. 10.1103/PhysRevB.68.08520410.1103/PhysRevB.68.085204 ↗
31. 10.1021/acs.chemrev.9b0051810.1021/acs.chemrev.9b00518 ↗
32. 10.1038/natrevmats.2017.8810.1038/natrevmats.2017.88 ↗
33. 10.1002/aelm.20160050110.1002/aelm.201600501 ↗
34. 10.1063/1.362347810.1063/1.3623478 ↗
35. 10.1063/1.132084910.1063/1.1320849 ↗
36. 10.1063/1.156406010.1063/1.1564060 ↗
37. 10.1088/1361-648X/aa8f7910.1088/1361-648X/aa8f79 ↗
38. 10.1088/0953-8984/21/39/39550210.1088/0953-8984/21/39/395502 ↗
39. 10.1103/PhysRevB.88.08511710.1103/PhysRevB.88.085117 ↗
40. 10.1088/0953-8984/27/13/13320210.1088/0953-8984/27/13/133202 ↗