Transient Electronics: High‐Temperature‐Triggered Thermally Degradable Electronics Based on Flexible Silicon Nanomembranes (Adv. Funct. Mater. 45/2018)
Source abstract
Abstract
In article number 1801448, Yongfeng Mei and co-workers report a distinct and irreversible transient process of flexible single crystal silicon nanomembrane devices at 300 °C. Integrating high-temperature degradable poly-α-methylstyrene (PAMS) interlayer in silicon nanomembrane devices allows for stable operation below the decomposition temperature of PAMS (∼ 300 °C), while higher temperatures trigger a self-destruction process. This work provides advantages for circuit safeguards, information security, and sensing/control systems in high-temperature electronics.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Sensor and Energy Harvesting Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and State Key Laboratory of ASIC and Systems Fudan University Shanghai 200433 P. R. China
Center for Bio‐Integrated Electronics Frederick Seitz Materials Research Laboratory University of Illinois at Urbana Champaign Northwestern University Evanston IL 60208 USA
Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology School of Physics Science and Engineering Tongji University Shanghai 200092 P. R. China
References
Reference metadata was not supplied for this record.