Direct‐Writing of 2D Diodes by Focused Ion Beams (Adv. Funct. Mater. 34/2021)
Source abstract
Abstract
Focused Ion Beam Writing In article number 2102708, Yang Tan, Feng Chen, and co-workers present a new method to “print” lateral PN junctions in MoSe2/graphene bilayers via ion beam irradiation. Controllable, focused Ga+ ions generate Se-defects on the top of the heterostructures and yield unique electronic properties. This work presents focused ions as an additional strategy for the direct-writing of elementary electronic devices in 2D materials.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ion-surface interactions and analysis · Electron and X-Ray Spectroscopy Techniques
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Affiliations
School of Physics State Key Laboratory of Crystal Materials Shandong University, Shandong Jinan 250100 China
Department of Physics and Electronic Engineering Heze University Shandong Heze 274015 China
References
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