journal article·2014-01

Amorphous Si3B3N7 Ceramic as a Versatile Host for Inorganic Phosphor Activators

Hasan Cakmak, Martin Jansen

Advanced Functional Materials· Volume 24· Issue 4
Publisher page

Abstract

Among the inorganic phosphors used in advanced lighting technologies, rare‐earth doped nitridosilicates have attracted significant attention because they exhibit superior photoluminescence properties in connection with high thermal, chemical, and mechanical stabilities. All of these materials are crystalline, which imposes substantial limitations in discovering new phosphors, since the activators to be included in the host matrix need to comply closely with the respective lattice sites, at least with respect to charge and size. As an approach to overcome such implications, an amorphous matrix, namely Si3B3N7, is suggested as a universal nitride‐based host accessible to (co)dope various activators, e.g., Eu2+, Ce3+ and Tb3+. Unlike crystalline phosphors, in the amorphous Si3B3N7 matrix, activator ions do not replace any atom from the random network host; instead, they act as network modifiers. The synthesis of this new class of amorphous phosphors is based on a precursor route, enabling high purities, and avoiding harsh temperature treatments.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Luminescence Properties of Advanced Materials · Perovskite Materials and Applications · Ammonia Synthesis and Nitrogen Reduction

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Max Planck Institute for Solid State Research Heisenbergstr. 1 70569 Stuttgart Germany

References (25)

Show source-provided references
1. 10.1117/12.38284010.1117/12.382840 ↗
2. 10.1126/science.110871210.1126/science.1108712 ↗
3. Tamaki H. · 2007
4. Zachau M. · Proc. SPIE · 2008 · 6910 · 6910101
5. 10.1038/nphoton.2009.3210.1038/nphoton.2009.32 ↗
6. 10.1038/459312a10.1038/459312a ↗
7. 10.1007/978-3-642-79017-110.1007/978-3-642-79017-1 ↗
8. 10.1016/S0022-3697(00)00194-310.1016/S0022-3697(00)00194-3 ↗
9. 10.1002/pssa.20052004510.1002/pssa.200520045 ↗
10. 10.1093/ietele/e88-c.11.205710.1093/ietele/e88-c.11.2057 ↗
11. 10.1016/j.jallcom.2005.09.04110.1016/j.jallcom.2005.09.041 ↗
12. 10.1016/j.cplett.2006.03.05610.1016/j.cplett.2006.03.056 ↗
13. 10.1002/pssa.20066957610.1002/pssa.200669576 ↗
14. 10.1016/j.stam.2007.08.00510.1016/j.stam.2007.08.005 ↗
15. 10.1002/anie.20100575510.1002/anie.201005755 ↗
16. 10.1016/S0925-8388(97)00550-110.1016/S0925-8388(97)00550-1 ↗
17. 10.1557/PROC-271-82110.1557/PROC-271-821 ↗
18. 10.1002/anie.19970328110.1002/anie.199703281 ↗
19. M.Jansen H.Cakmak German Patent Application:DE 102006051757.1 A12006.
20. 10.1002/(SICI)1521-3749(200004)626:4<963::AID-ZAAC963>3.0.CO;2-J10.1002/(SICI)1521-3749(200004)626:4<963::AID-ZAAC963>3.0.CO;2-J ↗
21. 10.1007/3-540-45613-9_310.1007/3-540-45613-9_3 ↗
22. 10.1016/j.jlumin.2010.07.01210.1016/j.jlumin.2010.07.012 ↗
23. 10.1016/j.jlumin.2006.12.00610.1016/j.jlumin.2006.12.006 ↗
24. 10.1016/S0022-3093(03)00324-710.1016/S0022-3093(03)00324-7 ↗
25. Blasse G. · Philips Tech. Rev. · 1970 · 31 · 304