Electron stimulated desorption from oxygenated and hydrogenated synthetic diamond films

Abstract Thin polycrystalline B-doped diamond films on Si, prepared by microwave plasma chemical vapour deposition, were diagnosed by means of secondary electron emission measurements. Investigations, including caesium deposition, were carried out on a hydrogen and an oxygen-terminated sample cut from the same wafer. Caesiation resulted in a mean secondary electron emission factor 〈 δ ∗ 〉 at a primary electron energy E p =1800 eV equal to 76 and 63 on the H- and O-terminated sample, respectively. Due to electron stimulated desorption, the secondary emission decreased to 〈 δ ∗ 〉≈45 on both samples under irradiation to a level of ∼1 C/cm 2 . On the caesiated samples the reduction of δ ∗ with electron dose was not local, but occurred over the whole surface because of the diffusion of Cs to the irradiated spot.