Homoepitaxial growth and characterization of phosphorus-doped diamond using tertiarybutylphosphine as a doping source

Abstract Phosphorus-doped diamond was grown by plasma-enhanced chemical vapor deposition (CVD) using tertiarybutylphosphine (TBP) as doping gas. It was confirmed that phosphorus was successfully doped into homoepitaxial diamond films. The films exhibited a negative Hall coefficient throughout the temperature range, from room temperature to ∼673 K, indicating n-type conductivity. The best sample showed a mobility of ∼250 cm2/V s at room temperature and the activation energy of the carrier conduction was ∼0.6 eV. From observations of the bound-exciton emission in cathodoluminescence measurements, it was also shown that phosphorus atoms are located in substitutional sites of the diamond lattice as donor atoms.