Structure and luminescence of GaN films by sputtering post-annealing-reaction technique

Abstract Gallium nitride (GaN) films were prepared on quartz substrates by sputtering post-annealing-reaction technique. The sputtered Ga 2 O 3 films were used as a precursor for GaN growth. X-ray diffractometer, X-ray photoelectron spectroscopy and TEM measurement results indicate that the obtained GaN films are polycrystalline films with hexagonal structure, which consist of single-crystalline nanorods. A strong blue photoluminescence located at 458 nm and a UV photoluminescence located at 370 nm is observed at room temperature.