The Realization of Dual‐Mode Non‐Volatile Storage by Different Regulation Methods for Floating Gate Devices Based on Ambipolar MoTe ₂ Channel

Abstract The 2D material floating gate devices possess huge application potential in compute‐in‐memory chips due to low power consumption. The floating gate devices based on ambipolar 2D material channel can achieve more complex storage functions due to dual‐carrier conduction characteristic. In this paper, the floating gate devices are prepared with the MoTe ₂ /h‐BN/Gr heterostructure. The MoTe ₂ channel floating gate device successfully achieved dual‐mode storage with the P‐state and N‐state memory by leveraging the symmetric ambipolar characteristics of MoTe ₂ channel _, demonstrating excellent non‐volatile memory performance, with large memory windows (>65%), high reading current on/off ratios (>10 ⁴ ), exceptional endurance (>1000 cycles), and retention (>1000 s) in both storage modes. The symmetric ambipolar characteristics allow this device to perform both erasing/writing in both storage modes using continuous unipolar control‐gate pulses. Additionally, concomitant dual‐mode storage also significantly enhances multi‐state storage state to 34 states in both storage modes. To enable switching between erasing/writing using symmetric bipolar pulses, a baseline voltage control method is proposed. The ideal erasing/writing states can be regulated by the symmetric bipolar pulses with the optimal peak. Therefore, compared to traditional unipolar channel floating gate devices, ambipolar channel floating gate devices have richer storage functions and application prospects in compute‐in‐memory chips.