Growth of hydrogenated amorphous silicon and its alloys
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OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies
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References (58)
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1. Street · Hydrogenated Amorphous Silicon · 199110.1017/CBO9780511525247 ↗
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4. Luft · 1993
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9. Role of hydrogen dilution in improvement of a-SiGe:H alloys10.1016/0022-3093(95)00763-6 ↗
10. Hydrogen dilution effects on a-Si:H and a-SiGe:H materials properties and solar cell performance10.1016/0022-3093(95)00657-5 ↗
11. Detection of H atoms in RF-discharge SiH4, CH4 and H2 plasmas by two-photon absorption laser-induced fluorescence spectroscopy10.1143/JJAP.33.4329 ↗
12. Measurement of the concentration of hydrogen radicals and their recombination probability on a-Si:H10.1016/0022-3093(96)00033-6 ↗
13. Ion energy distributions in silane-hydrogen plasmas
14. Plasma induced changes to TCO/a-Si:H interfaces
15. New diagnostic aspects of high rate a-Si:H deposition in a VHF plasma10.1016/0022-3093(96)00035-X ↗
16. Growth and nucleation of hydrogenated amorphous silicon on silicon (100) surfaces
17. STM observation on the initial growth of amorphous and microscrystalline silicon films
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19. Real time spectroscopic ellipsometry studies of the nucleation, growth and optical functions of thin films, Part I: tetrahedrally bonded materials
20. Investigation of the surface morphology of a-Si:H by atomic force miscroscopy and in-situ ellipsometry
21. Correlation of real time spectroscopic ellipsometry and atomic force miscroscopy measurements of surfaces roughness on amorphous semiconductor thin films10.1063/1.117397 ↗
22. Insights into deposition processes for amorphous semiconductor materials and devices from real time spectroscopic ellipsometry10.1016/0022-3093(96)00015-4 ↗
23. Mechanism of surface reaction in the deposition process of a-Si:H by rf glow discharge10.1103/PhysRevB.51.10635 ↗
24. Real time in situ observation of the film growth of hydrogenated amorphous silicon by infrared reflection absorption spectroscopy10.1063/1.103168 ↗
25. In situ investigation by IR ellipsometry of the growth and interfaces of amorphous silicon and related materials10.1016/0040-6090(93)90286-X ↗
26. Real time observations of surface reactions during a-Si:H deposition or H2 plasma annealing by using FT-IR-ATR10.1016/0022-3093(96)00032-4 ↗
27. Behavior of surface hydrogen on a-Ge10.1016/0022-3093(96)00036-1 ↗
28. Nanostructure of a-Si:H and related materials by small angle X-ray scattering
29. Improved stability against light exposure in amorphous deuterated silicon alloy solar cell10.1063/1.118418 ↗
30. New interpretation of the effect of hydrogen dilution of silane on glow-discharged hydrogenated amorphous silicon for stable solar cells10.1143/JJAP.35.26 ↗
31. A new deposition parameter to control the carrier drift mobility in a-Si:H10.1016/0022-3093(96)00022-1 ↗
32. Modified triode plasma configuration allowing precise control of ion energy for preparing high mobility a-Si:H
33. Narrow band-gap a-Si:H with improved minority carrier-transport prepared by chemical annealing10.1143/JJAP.30.L239 ↗
34. Effect of ion bombardment during plasma CVD on the film properties of a-Si:H studied by IEC plasma CVD10.1016/0022-3093(96)00024-5 ↗
35. Effect of ion bombardment during deposition of amorphous silicon and silicon-germanium alloy solar cells10.1016/0022-3093(96)00057-9 ↗
36. Improved a-Si1-xGex:H of large x deposited by PECVD10.1016/0022-3093(95)00765-2 ↗
37. Improvement on the quality of a-SiGe:H films10.1016/0022-3093(96)00055-5 ↗
38. Device-grade a-SiGe:H alloys prepared by nanometer deposition/H2 plasma annealing method10.1016/0022-3093(95)00767-9 ↗
39. Improvement of surface morphology and bulk structure of a-SiC:H films10.1016/0022-3093(96)00025-7 ↗
40. Fabrication of high quality silicon related films with band-gap of 1.5 eV by chemical annealing
41. Modulation of growing surface with atomic hydrogen and excited argon to fabricate narrow gap a-Si:H
42. Low band gap amorphous silicon deposited under He dilution in the γ-regime of an rf glow discharge: properties and stability10.1016/0022-3093(96)00043-9 ↗
43. Dominant monohydride bonding in hydrogenated amorphous silicon thin films formed by plasma enhanced chemical vapor deposition at room temperature10.1116/1.580480 ↗
44. Wide-gap a-Si:H fabricated by controlling voids
45. Improvement in a-Si:H properties by inert gas plasma treatment
46. Structural, optical, and photoelectronic properties of improved PECVD a-Ge:H10.1016/S0022-3093(05)80242-X ↗
47. Role of atomic hydrogen in chemical annealing10.1143/JJAP.34.442 ↗
48. Plasma enhanced chemical vapor deposition of hydrogenated amorphous silicon from dichlorosilane and silane gas mixtures10.1143/JJAP.34.L536 ↗
49. Effects of SiH2Cl2 addition on the growth mechanism of Si films prepared by photochemical vapor deposition
50. High deposition rate amorphous silicon-based multijunction solar cell10.1063/1.114024 ↗
51. The surface reaction in the high rate growth of a-Si:H,Cl from SiH2Cl2 + SiH410.1016/0022-3093(96)00020-8 ↗
52. I: Improved stability of a-Si:H fabricated from SiH2Cl2 by ECR hydrogen plasma10.1016/0022-3093(95)00708-3 ↗
53. Enhancement of the deposition rate of a-Si:H by introduction of an electronegative molecule into a silane discharge10.1016/0022-3093(96)00016-6 ↗
54. Annealing energy distribution of light-induced defects of hydrogenated amorphous silicon films growth from silane and dichlorosilane gas mixtures10.1143/JJAP.34.L159 ↗
55. Steady state defect density and annealing kinetics of light-induced defects in a-Si:H deposited from ‘new’ deposition techniques10.1016/0022-3093(96)00017-8 ↗
56. Improved quality of high deposition rate a-Si:H films prepared at usual substrate temperature10.1016/0022-3093(96)00042-7 ↗
57. On the a-Si:H film growth: the role of powder formation10.1016/0022-3093(96)00181-0 ↗
58. Nanoparticle deposition in hydrogenated amorphous silicon films during rf plasma deposition10.1063/1.115912 ↗