Multiscale modeling of thin film growth
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Theoretical and Computational Physics · nanoparticles nucleation surface interactions · Fluid Dynamics and Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (58)
Show source-provided references
1. Transport phenomena in epitaxy systems
2. Chemical vapor deposition processes
3. Kersch · 1995
4. Free molecular transport and deposition in long rectangular trenches10.1063/1.346328 ↗
5. Monte Carlo low pressure deposition profile simulations10.1116/1.577580 ↗
6. Evolution of surface-morphology during epitaxial-growth10.1098/rsta.1993.0103 ↗
7. Microscopic aspects of homoepitaxial growth10.1016/S0079-6816(97)00012-9 ↗
8. Bridging the length and time scale; from ab initio electronic structure calculations to macroscopic proportions
9. Melius · 1990
10. Thermochemical and chemical kinetic data for fluorinated hydrocarbons10.1016/0360-1285(95)00009-7 ↗
11. Theoretical study of the thermochemistry of molecules in the Si-O-H-C system10.1021/j100007a056 ↗
12. Theoretical study of the thermochemistry of molecules in the Si-B-H-Cl system10.1021/jp971947z ↗
13. Theoretical study of the thermochemistry of molecules in the Si-O-H system10.1021/j100041a052 ↗
14. Computational chemistry predictions of reaction processes in organometallic vapor phase epitaxy10.1016/S0960-8974(98)00002-3 ↗
15. A three dimensional model for low pressure chemical vapor deposition step coverage in trenches and vias10.1063/1.349797 ↗
16. Modeling and optimization of the step coverage of tungsten LPCVD in trenches and contact holes10.1149/1.2085863 ↗
17. Multiscale modeling of CVD processes10.1063/1.366666 ↗
18. A multiscale simulator for low pressure chemical vapor deposition10.1149/1.1838116 ↗
19. A level set approach to a unified model for etching, deposition and lithography I: algorithims and two-dimensional simulations10.1006/jcph.1995.1153 ↗
20. Microscopic uniformity in plasma etching10.1116/1.586180 ↗
21. Simulation of profile evolution in silicon reactive ion etching with re-emission and surface diffusion10.1116/1.586084 ↗
22. Simulation of surface topography evolution during plasma etching by the method of characteristics10.1116/1.578846 ↗
23. Investigation of electron source and ion flux unformity in high plasma density inductively coupled etching tools using two-dimensional modeling10.1116/1.587488 ↗
24. Two-dimensional fluid model of high density inductively coupled plasma sources10.1116/1.587102 ↗
25. Integrated plasma equipment model for polysilicon etch profiles in an inductively coupled plasma reactor with subwater and superwater topography10.1116/1.580659 ↗
26. Review of atomistic simulations of surface diffusion and growth on semiconductors10.1016/0927-0256(96)00030-4 ↗
27. Ab initio derived kinetic Monte Carlo model of H2 desorption from Si(100)-2 × 110.1103/PhysRevB.55.4649 ↗
28. Whalgren · 1992 · 1
29. Iterative minmization techniques for ab initio total-energy calculations — molecular-dynamics and conjugate gradients10.1103/RevModPhys.64.1045 ↗
30. Recent progress in computer-aided materials design for compound semiconductors10.1063/1.359360 ↗
31. Electronic structure properties of solids10.1021/jp953650b ↗
32. Theory of semiconductor surface reconstruction10.1088/0034-4885/60/5/002 ↗
33. Structural, dynamical, and electronic-properties of amorphous-silicon —an ab initio molecular-dynamics study10.1103/PhysRevLett.60.204 ↗
34. Ab initio dynamics of surface chemistry10.1146/annurev.physchem.48.1.243 ↗
35. Direct pathway for sticking desorption of H2 on Si(100)10.1103/PhysRevB.51.13432 ↗
36. Ab initio molecular dynamics study of the desorption of D-2 from Si(100)10.1103/PhysRevLett.79.701 ↗
37. The GaAs(001)-(2 × 4) surface: structure, chemistry, and adsorbates10.1021/jp962853c ↗
38. Adatom diffusion at GaN (0001) and (0001) surfaces10.1063/1.121909 ↗
39. Ab initio quantum and molecular dynamics of the dissociative adsorption of hydrogen on Pd(100)10.1103/PhysRevB.57.2493 ↗
40. Novel diffusion mechanism on the GaAs(001) surface: the roles of adatom-dimer interaction10.1103/PhysRevLett.79.5278 ↗
41. Modeling of epitaxial-growth10.1016/0921-5107(90)90086-Q ↗
42. Simulations of crystal-growth — effects of atomic beam energy10.1063/1.112243 ↗
43. Simulations of thin film deposition from atomic and cluster beams10.1016/0921-5107(95)01449-7 ↗
44. Epitaxy on surfaces vicinal to Si(001). 1. Diffusion of silicon adatoms over the terraces10.1103/PhysRevB.46.13428 ↗
45. Epitaxy on surfaces vicinal to Si(001). 2. Growth-properties of Si(001) steps10.1103/PhysRevB.46.13437 ↗
46. Applications of molecular dynamics simulations to crystal growth: step energies and low temperature growth10.1016/0927-0256(96)00027-4 ↗
47. A Monte Carlo simulation of the physical vapor deposition of nickel10.1016/S1359-6454(96)00256-X ↗
48. Simulations of ZnSe/GaAs heteroepitaxial growth10.1016/S0022-0248(96)01193-1 ↗
49. Hyperdynamics: accelerated molecular dynamics of infrequent events10.1103/PhysRevLett.78.3908 ↗
50. Theoretical foundations of dynamical Monte Carlo simulations10.1063/1.461138 ↗
51. Dynamic Monte Carlo simulations of surface-rate processes10.1021/ar00018a600 ↗
52. Island nucleation and growth on reconstructed GaAs(001) surfaces10.1103/PhysRevLett.81.633 ↗
53. A Monte Carlo simulation study for adatom migration and resultant atomic arrangements in AlxGa1−xAs on a GaAs(001) surface10.1016/0169-4332(94)90218-6 ↗
54. A Monte Carlo simulation study on the structural change of the GaAs(001) surface during MBE growth10.1016/0039-6028(96)00207-5 ↗
55. A theoretical investigation of migration potentials of Ga adatoms near step edges on GaAs(001)-c(4 × 4) surface10.1143/JJAP.35.L1016 ↗
56. Theoretical investigation of adsorption behavior during molecular beam epitaxy growth of GaAs: ab initio based microscopic calculation10.1016/0022-0248(95)80199-M ↗
57. The integrated multiscale modeling of diamond chemical vapor deposition10.1007/BF02914350 ↗
58. In-situ X-ray studies of organometallic vapor phase epitaxy growth10.1016/0921-5107(94)09004-1 ↗