SiGe alloys and heterojunctions - extending the performance of Si devices
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OpenAlex topics: Semiconductor Quantum Structures and Devices · Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices
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References (48)
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1. Recent advances and future trends of ULSI technologies
2. 1995 · 12
3. Group IV heterostructure physics and devices
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6. Low resistance bandgap-engineered W/SiGe/Si contacts
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8. Gas source MBE growth of Si/SiGe device materials10.1016/0022-0248(95)00961-2 ↗
9. Calculation of the fractional interstitial component of boron diffusion and segregation coefficient of boron in Si0.8Ge0.210.1063/1.116534 ↗
10. Diffusion of Sb in strained and relaxed Si and SiGe10.1103/PhysRevLett.76.3372 ↗
11. Comparison of P and Sb as n-dopants for Si molecular beam epitaxy10.1063/1.360286 ↗
12. Quantitative Auger electron spectroscopic analysis of Ge surface segregation in Si/GeSi(100) heterostructures10.1063/1.114781 ↗
13. Low-temperature buffer layer for growth of a low dislocation-density SiGe layer on Si by molecular beam epitaxy10.1063/1.360899 ↗
14. Strain relaxation of Si/Ge multilayer: coherent islands formation and their evolution as a function of the strain10.1063/1.360982 ↗
15. Three-stage lattice relaxation of Ge islands on Si(111) measured by tunneling microscopy10.1063/1.114052 ↗
16. Photoluminescence and electroluminescence of SiGe dots fabricated by Island growth10.1063/1.114051 ↗
17. Photoluminescence and electroluminescence study of SiSiGe quantum dots10.1016/0169-4332(96)00080-3 ↗
18. Self-organization in growth of quantum dot superlattices10.1103/PhysRevLett.76.1675 ↗
19. Growth and strain symmetrization of Si/Ge/C/Sn quaternary alloys by molecular epitaxy10.1063/1.115745 ↗
20. Optical absorption in alloys of Si, Ge C, and Sn10.1063/1.362489 ↗
21. Near bandedge photoluminescence from pseudomorphic SiC/Si quantum well structures10.1103/PhysRevLett.76.303 ↗
22. Spatially indirect radiative recombination of carriers localized in Si1−x−yGexCy/Si1−y double well structures on Si substrates10.1063/1.117391 ↗
23. A manufacturable poly-emitter graded-SiGe HBT technology for wireless and mixed-signal applications10.1016/0169-4332(96)00048-7 ↗
24. Enhanced SiGe heterojunction bipolar transistors with 160 GHz-fmax
25. Mesa and planar SiGe-HBTs on MBE-wafers
26. Low-frequency noise characteristics of UHV/CVD Epitaxial Si- and SiGe-base bipolar transistors10.1109/55.475562 ↗
27. 24 Gbit/s demultiplexer IC using oxide planarised Si/SiGe heterojunction bipolar transistors10.1049/el:19960308 ↗
28. Comparison of time to failure to GeSi and Si bipolar transistors10.1109/55.491832 ↗
29. On the optimization of SiGe-base bipolar transistors10.1109/16.535344 ↗
30. Electrical determination of bandgap narrowing in bipolar transistors with epitaxial Si, epitaxial Sl1−xGex, and ion implanted bases10.1109/16.491255 ↗
31. Base resistance and effective bandgap reduction in n-p-n Si/Si1−xGexSi HBT's with heavy+ base doping10.1109/16.485661 ↗
32. Si/Si1-x-yGexCy/Si heterojunction bipolar transistors10.1109/55.506359 ↗
33. Electron transport in bipolar transistors with biaxially strained base layers10.1109/16.477594 ↗
34. Fabrication of n-and p-channel-in-plane-gate transistors from Si/SiGe/Ge heterostructures by focused laser beam writing10.1063/1.115565 ↗
35. Functional devices based on real space transfer on Si/SiGe structure10.1109/16.536813 ↗
36. Novel ESD protection transistor including SiGe buried layer to reduce local temperature overheating10.1109/16.485664 ↗
37. High-mobility strained-SI PMOSFET's10.1109/16.536817 ↗
38. Mobility simulation of a novel Si/SiGe FET structure10.1109/55.484123 ↗
39. High speed p-type SiGe modulation-doped field-effect transistors10.1109/55.485188 ↗
40. DC and RF performance of 0.25 μm p-type SiGe MODFET10.1109/55.536289 ↗
41. Fabrication of thin film transistors using a Si/Si1−xGex/Si triple layer film on a SiO2 substrate10.1109/55.491830 ↗
42. Growth mode transition and photoluminescence properties of Si1−xGex/Si quantum well structures with high Ge composition10.1063/1.113608 ↗
43. Photoluminescence study of the crossover from two-dimensional to three-dimensional growth for Ge on Si(100)10.1063/1.114401 ↗
44. Optimization of luminescent properties with respect to crystal growth temperatures for SiGe single quantum wells grown by molecular beam epitaxy10.1063/1.358869 ↗
45. Effect of rapid thermal annealing on the photoluminescence properties of SiGe/Sl heterostructures10.1063/1.359860 ↗
46. Normal-incidence strained-layer supperlattice Ge0.5Si0.5Si photodiodes near 1.3 μm10.1063/1.115171 ↗
47. Optical absorption spectroscopy of Si-Ge alloys and superlattices10.1103/PhysRevB.54.1545 ↗
48. Auger-free Si-SiGe quantum well structures for infra-red detection at 10 μm10.1016/0038-1101(95)00129-8 ↗