journal article·2016-05

Discovering a Dual‐Buffer Effect for Lithium Storage: Durable Nanostructured Ordered Mesoporous Co–Sn Intermetallic Electrodes

Gwi Ok Park, Jeongbae Yoon, Jeong Kuk Shon, Yun Seok Choi, Jong Gu Won, Su Bin Park, Kyoung Ho Kim, Hansu Kim, Won‐Sub Yoon, Ji Man Kim

Advanced Functional Materials· Volume 26· Issue 17
Publisher page

Abstract

Lithiation–delithiation reactions in Li‐ion batteries do exhibit a huge electrochemically driven volume change of the anode material between the lithium‐free and lithiated‐host states, which results in a gradually fading capacity. Minimizing this volume change of the electrode during cycling is essential to achieve stable electrochemical behavior and thus for innovating design of electrode materials for Li storage. Here, ordered mesoporous CoSn intermetallic anode materials with various Co/Sn atomic ratios are developed. A dual‐buffer effect is discovered that accommodates the volume changes in the electrode material by not only repeatedly generating void nanospaces but also by incorporating electrochemically inactive elements. Novel insights into the nanostructural changes of electrode materials during the lithiation–delithiation process are obtained by in operando small angle X‐ray scattering. The degrees of volume change and nanoscopic order are found to be highly dependent on the Co contents in the mesoporous CoSn intermetallic anode materials, being possible to achieve a durable nanostructured electrode upon prolonged cycling.
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Research context

OpenAlex topics: Advancements in Battery Materials · Extraction and Separation Processes · Advanced Battery Materials and Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Energy Science Sungkyunkwan University Suwon 440‐746 Republic of Korea

Department of Chemistry Sungkyunkwan University Suwon 440‐746 Republic of Korea

Energy Lab. Samsung Advanced Institute of Technology Samsung Electronics Co. Ltd. Suwon 443‐803 Republic of Korea

Department of Energy Engineering Hanyang University Seoul 133‐791 Republic of Korea

Funding

Samsung Research Funding Center of Samsung Electronics · Energy Efficiency and Resources Core Technology program · Ministry of Trade, Industry and Energy · Degree and Research Center (DRC) Program (2014)

References (54)

Show source-provided references
1. 10.1016/S0013-4686(99)00191-710.1016/S0013-4686(99)00191-7 ↗
2. 10.1016/j.nanoen.2013.06.00410.1016/j.nanoen.2013.06.004 ↗
3. 10.1149/1.138817810.1149/1.1388178 ↗
4. 10.1039/b919877f10.1039/b919877f ↗
5. 10.1039/c3cp54507e10.1039/c3cp54507e ↗
6. 10.1039/C4TA02888K10.1039/C4TA02888K ↗
7. 10.1002/adma.20070136410.1002/adma.200701364 ↗
8. 10.1002/anie.20090172310.1002/anie.200901723 ↗
9. 10.1002/adma.20070292810.1002/adma.200702928 ↗
10. 10.1039/b914650d10.1039/b914650d ↗
11. 10.1021/nl303823k10.1021/nl303823k ↗
12. 10.1021/nn406105n10.1021/nn406105n ↗
13. 10.1021/nn202715910.1021/nn2027159 ↗
14. 10.1007/s10008-008-0529-z10.1007/s10008-008-0529-z ↗
15. 10.1149/1.220487110.1149/1.2204871 ↗
16. 10.1016/j.electacta.2008.07.07010.1016/j.electacta.2008.07.070 ↗
17. 10.1016/j.ssi.2006.07.03010.1016/j.ssi.2006.07.030 ↗
18. 10.1021/am100218v10.1021/am100218v ↗
19. 10.1149/1.297808210.1149/1.2978082 ↗
20. 10.1021/jp205979m10.1021/jp205979m ↗
21. 10.1016/j.electacta.2011.04.10310.1016/j.electacta.2011.04.103 ↗
22. 10.1002/anie.20070250510.1002/anie.200702505 ↗
23. 10.1039/c2cs35086f10.1039/c2cs35086f ↗
24. 10.1098/rsta.2010.011210.1098/rsta.2010.0112 ↗
25. 10.1016/j.nantod.2010.11.00210.1016/j.nantod.2010.11.002 ↗
26. 10.1039/c0ee00699h10.1039/c0ee00699h ↗
27. 10.1021/acsnano.5b0137810.1021/acsnano.5b01378 ↗
28. 10.1021/ja042601m10.1021/ja042601m ↗
29. 10.1039/B811718G10.1039/B811718G ↗
30. 10.1021/jp013187510.1021/jp0131875 ↗
31. 10.1016/j.electacta.2008.11.04410.1016/j.electacta.2008.11.044 ↗
32. 10.1016/j.jallcom.2008.09.03010.1016/j.jallcom.2008.09.030 ↗
33. 10.1126/science.119562810.1126/science.1195628 ↗
34. 10.1039/c1ee01918j10.1039/c1ee01918j ↗
35. 10.1002/aenm.20120002410.1002/aenm.201200024 ↗
36. Glatter O. · 1982
37. 10.1039/C5EE00488H10.1039/C5EE00488H ↗
38. 10.1093/acprof:oso/9780199639533.001.000110.1093/acprof:oso/9780199639533.001.0001 ↗
39. 10.1016/j.str.2013.04.02010.1016/j.str.2013.04.020 ↗
40. Scherrer P. · Nachr. Ges. Wiss. Goettingen, Math.‐Phys. Kl. · 1918 · 26 · 98
41. 10.1021/jp962083510.1021/jp9620835 ↗
42. 10.1021/cm300996j10.1021/cm300996j ↗
43. 10.1107/S002188980402772410.1107/S0021889804027724 ↗
44. 10.1016/0079-6786(90)90006-210.1016/0079-6786(90)90006-2 ↗
45. 10.1016/S0013-4686(99)00191-710.1016/S0013-4686(99)00191-7 ↗
46. 10.1016/j.electacta.2007.10.06910.1016/j.electacta.2007.10.069 ↗
47. 10.1016/j.jallcom.2008.11.14710.1016/j.jallcom.2008.11.147 ↗
48. 10.1016/j.jallcom.2009.08.13410.1016/j.jallcom.2009.08.134 ↗
49. 10.1039/c2cc34207c10.1039/c2cc34207c ↗
50. 10.1016/j.cattod.2011.09.01910.1016/j.cattod.2011.09.019 ↗
51. 10.1039/C4NJ00626G10.1039/C4NJ00626G ↗
52. 10.1166/jnn.2015.1026310.1166/jnn.2015.10263 ↗
53. 10.1016/j.micromeso.2008.12.02210.1016/j.micromeso.2008.12.022 ↗
54. Hammersley A. P. · 1997 · 2