Atomistic Study of a CaTiO₃‐Based Mixed Conductor: Defects, Nanoscale Clusters, and Oxide‐Ion Migration

Abstract Mixed oxide‐ion and electronic conductivity can be exploited in dense ceramic membranes for controlled oxygen separation as a means of producing pure oxygen or integrating with catalytic oxidation. Atomistic simulation has been used to probe the energetics of defects, dopant‐vacancy association, nanoscale cluster formation, and oxide‐ion transport in mixed‐conducting CaTiO₃. The most favorable energetics for trivalent dopant substitution on the Ti site are found for Mn³⁺ and Sc³⁺. Dopant‐vacancy association is predicted for pair clusters and neutral trimers. Low binding energies are found for Sc³⁺ in accordance with the high oxide‐ion conductivity of Sc‐doped CaTiO₃. The preferred location for Fe⁴⁺ is in a hexacoordinated site, which supports experimental evidence that Fe⁴⁺ promotes the termination of defect chains and increases disorder. A higher oxide‐ion migration energy for a vacancy mechanism is predicted along a pathway adjacent to an Fe³⁺ ion rather than Fe⁴⁺ and Ti⁴⁺, consistent with the higher observed activation energies for ionic transport in reduced CaTi(Fe)O_3–δ.