X‐Ray Spectroscopic Investigation of Chlorinated Graphene: Surface Structure and Electronic Effects
Source abstract
Abstract
Chemical doping of graphene represents a powerful means of tailoring its electronic properties. Synchrotron‐based X‐ray spectroscopy offers an effective route to investigate the surface electronic and chemical states of functionalizing dopants. In this work, a suite of X‐ray techniques is used, including near edge X‐ray absorption fine structure spectroscopy, X‐ray photoemission spectroscopy, and photoemission threshold measurements, to systematically study plasma‐based chlorinated graphene on different substrates, with special focus on its dopant concentration, surface binding energy, bonding configuration, and work function shift. Detailed spectroscopic evidence of C–Cl bond formation at the surface of single layer graphene and correlation of the magnitude of p‐type doping with the surface coverage of adsorbed chlorine is demonstrated for the first time. It is shown that the chlorination process is a highly nonintrusive doping technology, which can effectively produce strongly p‐doped graphene with the 2D nature and long‐range periodicity of the electronic structure of graphene intact. The measurements also reveal that the interaction between graphene and chlorine atoms shows strong substrate effects in terms of both surface coverage and work function shift.
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Research context
OpenAlex topics: Graphene research and applications · Graphene and Nanomaterials Applications · Advancements in Battery Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA 02139 USA
Energy Frontier Research Center (EFRC) Columbia University New York NY 10027 USA
Stanford Synchrotron Radiation Lightsource SLAC National Accelerator Laboratory Menlo Park CA 94025 USA
Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge MA 02139 USA
References (36)
Show source-provided references
1. 10.1126/science.110289610.1126/science.1102896 ↗
2. 10.1021/nn402675610.1021/nn4026756 ↗
3. 10.1021/ja209106810.1021/ja2091068 ↗
4. 10.1021/nn201731t10.1021/nn201731t ↗
5. 10.1088/0953-8984/24/31/31420210.1088/0953-8984/24/31/314202 ↗
6. 10.1039/C1RA00403D10.1039/C1RA00403D ↗
7. 10.1103/PhysRevB.81.20543510.1103/PhysRevB.81.205435 ↗
8. 10.1021/nn102527410.1021/nn1025274 ↗
9. 10.1126/science.116713010.1126/science.1167130 ↗
10. 10.1103/PhysRevB.75.15340110.1103/PhysRevB.75.153401 ↗
11. 10.1021/jp208814310.1021/jp2088143 ↗
12. 10.1021/jp307006c10.1021/jp307006c ↗
13. 10.1557/jmr.2013.38210.1557/jmr.2013.382 ↗
14. 10.1002/pssb.20145129510.1002/pssb.201451295 ↗
15. 10.1039/C4NR05070C10.1039/C4NR05070C ↗
16. 10.1002/adma.20130038510.1002/adma.201300385 ↗
17. 10.1038/ncomms246410.1038/ncomms2464 ↗
18. Tan Y.‐Z. · Nat. Commun. · 2013 · 4
19. 10.1002/smll.20120296910.1002/smll.201202969 ↗
20. 10.1039/C4NR04387A10.1039/C4NR04387A ↗
21. Poh H. L. · Chem. Weinh. Bergstr. Ger. · 2013 · 19 · 2655
22. 10.1021/nl301409h10.1021/nl301409h ↗
23. 10.1126/science.120875910.1126/science.1208759 ↗
24. 10.1021/nl401781d10.1021/nl401781d ↗
25. 10.1039/c0cp00789g10.1039/c0cp00789g ↗
26. 10.1016/j.apsusc.2011.05.13110.1016/j.apsusc.2011.05.131 ↗
27. 10.1016/S0008-6223(00)00309-210.1016/S0008-6223(00)00309-2 ↗
28. 10.1103/PhysRevB.86.07541710.1103/PhysRevB.86.075417 ↗
29. Stöhr J. · 1992
30. 10.1016/0092-640X(85)90016-610.1016/0092-640X(85)90016-6 ↗
31. 10.1002/rcm.129008071610.1002/rcm.1290080716 ↗
32. 10.1016/j.cplett.2009.05.05410.1016/j.cplett.2009.05.054 ↗
33. 10.1103/PhysRevLett.101.06680610.1103/PhysRevLett.101.066806 ↗
34. Lide D. R. · 2004
35. 10.1103/PhysRevLett.74.61410.1103/PhysRevLett.74.614 ↗
36. 10.1016/0039-6028(86)90163-910.1016/0039-6028(86)90163-9 ↗