journal article·2019-07

Associative Memory for Image Recovery with a High‐Performance Memristor Array

Ying Zhou, Huaqiang Wu, Bin Gao, Wei Wu, Yue Xi, Peng Yao, Shuanglin Zhang, Qingtian Zhang, He Qian

Advanced Functional Materials· Volume 29· Issue 30
Publisher page

Abstract

Abstract Associative memory is one of the significant characteristics of the biological brain. However, it has yet to be realized in a large memristor array due to the high requirements on the memristor device. In this work, the multilevel memristor cell is optimized by employing an electro‐thermal modulation layer. Memristor devices show both high resistance, cell‐to‐cell uniformity, and multilevel resistive switching behaviors with good reliability. A Hopfield neural network is experimentally demonstrated on a 1k memristor array that is capable of realizing the associative memory function for emotion image recovery. By using both asynchronous and synchronous refresh schemes, complete emotion images can be recalled from partial information.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Neural dynamics and brain function · CCD and CMOS Imaging Sensors

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Microelectronics Tsinghua University Beijing 100084 China

Funding

National Natural Science Foundation of China · Ministry of Science and Technology of the People's Republic of China · Beijing Municipal Science and Technology Commission

References (49)

Show source-provided references
1. 10.1007/s11263-015-0816-y10.1007/s11263-015-0816-y ↗
2. 10.1021/acs.nanolett.7b0055210.1021/acs.nanolett.7b00552 ↗
3. 10.1186/s40537-014-0007-710.1186/s40537-014-0007-7 ↗
4. Pavlov P. I. · Ann. Neurosci. · 2010 · 8 · 136
5. Danilo R. · 2015 · 2501
6. 10.1037/0033-295X.84.5.41310.1037/0033-295X.84.5.413 ↗
7. 10.1109/21.8705410.1109/21.87054 ↗
8. Fukuda T. · 2001 · 1210.1007/3-540-44732-6_2 ↗
9. 10.1109/72.47839710.1109/72.478397 ↗
10. 10.1073/pnas.79.8.255410.1073/pnas.79.8.2554 ↗
11. 10.1073/pnas.81.10.308810.1073/pnas.81.10.3088 ↗
12. 10.1007/BF0033994310.1007/BF00339943 ↗
13. 10.1126/science.375525610.1126/science.3755256 ↗
14. 10.1109/31.3132510.1109/31.31325 ↗
15. 10.1038/ncomms852210.1038/ncomms8522 ↗
16. 10.1109/TED.2011.214779110.1109/TED.2011.2147791 ↗
17. 10.1002/adma.20120368010.1002/adma.201203680 ↗
18. 10.1038/nnano.2017.8310.1038/nnano.2017.83 ↗
19. 10.1038/nature1444110.1038/nature14441 ↗
20. Wu H. · 2017 · 11.5.110.1109/IEDM.2017.8268372 ↗
21. 10.1002/adma.20170591410.1002/adma.201705914 ↗
22. Park S. · 2013 · 25.6.110.1109/IEDM.2013.6724692 ↗
23. 10.1038/ncomms1280510.1038/ncomms12805 ↗
24. 10.1039/C6NR04142F10.1039/C6NR04142F ↗
25. 10.1088/0957-4484/24/38/38401210.1088/0957-4484/24/38/384012 ↗
26. 10.1038/s41467-017-02337-y10.1038/s41467-017-02337-y ↗
27. 10.1038/s41467-018-04484-210.1038/s41467-018-04484-2 ↗
28. 10.1038/s42256-018-0001-410.1038/s42256-018-0001-4 ↗
29. 10.1038/s41928-017-0002-z10.1038/s41928-017-0002-z ↗
30. 10.1038/ncomms1519910.1038/ncomms15199 ↗
31. 10.3389/fnins.2014.0020510.3389/fnins.2014.00205 ↗
32. Eryilmaz S. B. · 2015 · 4.1.110.1109/IEDM.2015.7409622 ↗
33. Milo V. · 2017 · 11.2.110.1109/IEDM.2017.8268369 ↗
34. 10.1039/C4NR00500G10.1039/C4NR00500G ↗
35. 10.1109/LED.2016.254287910.1109/LED.2016.2542879 ↗
36. Wu M. C. · Semicond. Sci. Technol. · 2012 · 27 · 68
37. 10.1109/LED.2014.237520010.1109/LED.2014.2375200 ↗
38. 10.1109/TED.2013.224550810.1109/TED.2013.2245508 ↗
39. Yan B. · 2016 · 1390
40. 10.1109/TNANO.2017.278436410.1109/TNANO.2017.2784364 ↗
41. 10.1016/j.microrel.2014.07.13510.1016/j.microrel.2014.07.135 ↗
42. Fantini A. · 2013 · 3010.1109/IMW.2013.6582090 ↗
43. 10.1109/TIT.1987.105732810.1109/TIT.1987.1057328 ↗
44. 10.1109/82.28570610.1109/82.285706 ↗
45. 10.1109/JPROC.2012.219036910.1109/JPROC.2012.2190369 ↗
46. Wu W. · 2018 · 10310.1109/VLSIT.2018.8510690 ↗
47. 10.1088/0957-4484/27/39/39520110.1088/0957-4484/27/39/395201 ↗
48. Traoré B. · 2014 · 21.5.110.1109/IEDM.2014.7047097 ↗
49. Gao B. · 2017 · 4.4.110.1109/IEDM.2017.8268326 ↗