Patterned Self‐Assembled Monolayers on Silicon Oxide Prepared by Nanoimprint Lithography and Their Applications in Nanofabrication
Source abstract
Abstract
Abstract Nanoimprint lithography (NIL) is used as a tool to pattern self‐assembled monolayers (SAMs) on silicon substrates because of its ability to pattern in the micrometer and nanometer ranges. The polymer template behaves as a physical barrier preventing the formation of a SAM in the covered areas of the substrate. After polymer removal, SAM patterns are obtained. The versatility of the method is shown in various nanofabrication schemes. Substrates are functionalized with a second type of silane adsorbate. Pattern enhancement via selective electrostatic attachment of carboxylate‐functionalized particles is achieved. Further applications of the NIL‐patterned substrates include template‐directed adsorption of particles, as well as the fabrication of electrodes on top of a SAM.
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Research context
OpenAlex topics: Nanofabrication and Lithography Techniques · Force Microscopy Techniques and Applications · Microfluidic and Capillary Electrophoresis Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (33)
Show source-provided references
1. 10.1147/rd.455.069710.1147/rd.455.0697 ↗
2. 10.1021/cm00041a00710.1021/cm00041a007 ↗
3. 10.1021/ja000713h10.1021/ja000713h ↗
4. 10.1063/1.12019510.1063/1.120195 ↗
5. 10.1063/1.155943910.1063/1.1559439 ↗
6. 10.1016/S1367-5931(02)00005-410.1016/S1367-5931(02)00005-4 ↗
7. 10.1002/adma.20030483410.1002/adma.200304834 ↗
8. 10.1002/1521-4095(20020418)14:8<572::AID-ADMA572>3.0.CO;2-B10.1002/1521-4095(20020418)14:8<572::AID-ADMA572>3.0.CO;2-B ↗
9. 10.1021/nl034851r10.1021/nl034851r ↗
10. 10.1002/anie.20035276710.1002/anie.200352767 ↗
11. 10.1002/adma.20030479210.1002/adma.200304792 ↗
12. 10.1021/la011830910.1021/la0118309 ↗
13. 10.1002/adfm.20030000210.1002/adfm.200300002 ↗
14. 10.1002/(SICI)1521-3773(19980316)37:5<550::AID-ANIE550>3.0.CO;2-G10.1002/(SICI)1521-3773(19980316)37:5<550::AID-ANIE550>3.0.CO;2-G ↗
15. 10.1126/science.283.5402.66110.1126/science.283.5402.661 ↗
16. 10.1021/nl035045n10.1021/nl035045n ↗
17. 10.1002/1521-4095(200106)13:11<803::AID-ADMA806>3.0.CO;2-W10.1002/1521-4095(200106)13:11<803::AID-ADMA806>3.0.CO;2-W ↗
18. 10.1126/science.272.5258.8510.1126/science.272.5258.85 ↗
19. 10.1016/S0167-9317(96)00097-410.1016/S0167-9317(96)00097-4 ↗
20. C. M. Sotomayor Torres Alternative Lithography Kluwer Dordrecht The Netherlands2004.10.1007/978-1-4419-9204-8 ↗
21. 10.1063/1.161081410.1063/1.1610814 ↗
22. 10.1063/1.128867410.1063/1.1288674 ↗
23. 10.1021/nl005513i10.1021/nl005513i ↗
24. 10.1021/nl034831p10.1021/nl034831p ↗
25. When the immersion time in acetone was extended the lateral dissolution of PMMA produced a reduction of the width of the polymer lines (e.g. from 600 nm to 200 nm in 90 s).
26. 10.1063/1.11960810.1063/1.119608 ↗
27. 10.1002/pssa.221062024710.1002/pssa.2210620247 ↗
28. 10.1021/la047982w10.1021/la047982w ↗
29. 10.1002/adfm.20030000210.1002/adfm.200300002 ↗
30. 10.1021/cm010843510.1021/cm0108435 ↗
31. 10.1021/ja003187310.1021/ja0031873 ↗
32. 10.1063/1.151295010.1063/1.1512950 ↗
33. 10.1063/1.145350910.1063/1.1453509 ↗