Influences of Connecting Unit Architecture on the Performance of Tandem Organic Light‐Emitting Devices
Source abstract
Abstract
Abstract The present work investigates the influence of the n‐type layer in the connecting unit on the performance of tandem organic light‐emitting devices (OLEDs). The n‐type layer is typically an organic electron‐transporting layer doped with reactive metals. By systematically varying the metal dopants and the electron‐transporting hosts, we have identified the important factors affecting the performance of the tandem OLEDs. Contrary to common belief, device characteristics were found to be insensitive to metal work functions, as supported by the ultraviolet photoemission spectroscopy results that the lowest unoccupied molecular orbitals of all metal‐doped n‐type layers studied here have similar energy levels. It suggests that the electron injection barriers from the connecting units are not sensitive to the metal dopant used. On the other hand, it was found that performance of the n‐type layers depends on their electrical conductivities which can be improved by using an electron‐transporting host with higher electron mobility. This effect is further modulated by the optical transparency of constituent organic layers. The efficiency of tandem OLEDs would decrease as the optical transmittance decreases.
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Research context
OpenAlex topics: Organic Light-Emitting Diodes Research · Organic Electronics and Photovoltaics · Conducting polymers and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (25)
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1. J. Kido T. Nakada J. Endo N. Kawamura K. Mori A. Yokoi T. Matsumoto inProc. 11th Int. Workshop on Inorganic and Organic Electroluminescence and 2002 Int. Conf. on the Science and Technology of Emissive Displays and Lighting(Eds: K. Neyts P. De Visschere D. Poelman) Universiteit Ghent Ghent Belgium2002 p. 539.
2. 10.1889/1.183244910.1889/1.1832449 ↗
3. 10.1063/1.163862410.1063/1.1638624 ↗
4. 10.1063/1.164047010.1063/1.1640470 ↗
5. 10.1063/1.214171810.1063/1.2141718 ↗
6. 10.1002/adma.20050191510.1002/adma.200501915 ↗
7. 10.1063/1.214773010.1063/1.2147730 ↗
8. S. M. Sze Physics of Semiconductor Devices Wiley‐VCH New York1981.
9. 10.1063/1.170720110.1063/1.1707201 ↗
10. http://www.webelements.com(accessed July 2007)
11. 10.1063/1.156157910.1063/1.1561579 ↗
12. 10.1063/1.214917810.1063/1.2149178 ↗
13. 10.1063/1.11164510.1063/1.111645 ↗
14. 10.1016/S0009-2614(99)01384-610.1016/S0009-2614(99)01384-6 ↗
15. Kahn A. · Chem. Phys. Lett. · 2006 · 325 · 129
16. 10.1063/1.132468110.1063/1.1324681 ↗
17. 10.1016/S0009-2614(02)01790-610.1016/S0009-2614(02)01790-6 ↗
18. 10.1063/1.157955810.1063/1.1579558 ↗
19. 10.1063/1.12298210.1063/1.122982 ↗
20. 10.1063/1.235784610.1063/1.2357846 ↗
21. 10.1063/1.12570110.1063/1.125701 ↗
22. 10.1016/S0009-2614(00)01442-110.1016/S0009-2614(00)01442-1 ↗
23. 10.1063/1.137499810.1063/1.1374998 ↗
24. 10.1063/1.12410710.1063/1.124107 ↗
25. D. J. Williams presented at 2004 China Flat Panel Display Conf. Shanghai China October 22–23 2004.