journal article·2019-03

High‐Performance SiC Nanobelt Photodetectors with Long‐Term Stability Against 300 °C up to 180 Days

Tao Yang, Shanliang Chen, Xiaoxiao Li, Xiaojie Xu, Fengmei Gao, Lin Wang, Junhong Chen, Weiyou Yang, Xinmei Hou, Xiaosheng Fang

Advanced Functional Materials· Volume 29· Issue 11
Publisher page

Abstract

Abstract In the present work, high‐performance photodetectors (PDs) based on a single B‐doped 3C‐SiC nanobelt, which are synthesized via catalyst‐free pyrolysis of polymeric precursors of polysilazane, are reported. The as‐built PDs have a high responsivity and external quantum efficiency of 6.37 × 105 A · W−1 and 2.0 × 108% under 405 nm light with a power density of 0.14 mW · cm−2 at 5 V, respectively. The detectivity of the PDs is measured to be of 6.86 × 1014 Jones. Moreover, the B‐doped 3C‐SiC nanobelt PDs exhibit a long‐term stability against 300 °C up to 180 days, suggesting their promising applications to be served under harsh conditions.
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Research context

OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Collaborative Innovation Center of Steel Technology University of Science and Technology Beijing Beijing 100083 P. R. China

Institute of Materials Ningbo University of Technology Ningbo 315016 P. R. China

Department of Materials Science Fudan University Shanghai 200433 P. R. China

Funding

National Natural Science Foundation of China · National Postdoctoral Program for Innovative Talents · Natural Science Foundation of Zhejiang Province · Natural Science Foundation of Ningbo Municipality

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