Inorganic ZnTe Hole Transport Layer for PbS Quantum Dot Infrared Photodetectors and Imagers

Ya Wang; Jing Liu; Xi Ran; Haolin Lu; Jing Liu; Junrui Yang; Hang Xia; Xingchen Zhang; Jianbing Zhang; Liang Gao; Guankui Long; Huicheng Hu; Jiang Tang; Xinzheng Lan

doi:10.1002/adfm.202426082

journal article·2025-08Open access

Inorganic ZnTe Hole Transport Layer for PbS Quantum Dot Infrared Photodetectors and Imagers

Ya Wang, Jing Liu, Xi Ran, Haolin Lu, Jing Liu, Junrui Yang, Hang Xia, Xingchen Zhang, Jianbing Zhang, Liang Gao, Guankui Long, Huicheng Hu, Jiang Tang, Xinzheng Lan

Advanced Functional Materials· Volume 35· Issue 34

Publisher page Open full text

Source abstract

Abstract

Abstract PbS quantum dot (QD) photodetectors promise a new generation of short‐wave infrared detection technology due to their low cost and ease of integration. The organic ligand‐capped hole transport layers (HTLs) suffer from poor film quality, limiting potential applications in large focal plane arrays. Herein, a robust inorganic HTL – one based on sputtered ZnTe – is reported that is compatible with microelectronic fabrication. The significance of a mild post‐annealing process in band alignment and interface passivation is identified. A surface dipole mechanism is proposed – based on the first‐principles calculations – to explain the upward shift in the energy band of ZnTe. The resultant PbS QD photodetectors based on ZnTe HTL shows a specific detectivity of 1.32 × 10 ¹² Jones at ≈1300 nm, nearly one order of magnitude higher than that of the control devices. PbS QD imager with a pixel array of 640 × 512 is finally fabricated, verifying the compatibility of the ZnTe HTL with silicon‐based readout circuitry.

Source: crossref · Quality: baseline

Research context

Materials processing

OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan Hubei 430074 P.R. China

Yangtze Delta Region Academy of Beijing Institute of Technology Jiaxing Zhejiang 314019 P.R. China

School of Materials Science and Engineering Nankai University Tianjin 300350 P. R. China

Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology Wuhan Hubei 430074 P. R. China

School of Integrated Circuit Huazhong University of Science and Technology Wuhan Hubei 430074 P. R. China

Optics Valley Laboratory Wuhan Hubei 430074 P. R. China

Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology Wenzhou Zhejiang 325035 P. R. China

Funding

National Natural Science Foundation of China

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