Multielement Filament Memristor Enabling Multifunctional Neuromorphic Device

Abstract Memristors exhibit changes in internal resistance in response to external voltage, introducing new functionalities to electronic devices. This enables diverse applications in non‐volatile memory, neuromorphic devices, sensors, and computing systems, highlighting their growing importance in electronics. These applications leverage various mechanisms underlying memristors. Therefore, understanding these mechanisms and discovering new memristive mechanisms are essential for overcoming implementation challenges and developing emerging applications. Here, a new type of memristor is introduced comprising an Ag/Ag:Cu‐islands/HfO ₂ /Pt structure, characterized by a hybrid mechanism and its potential for multifunctional applications. The memristor combines the metallic filament (Ag/Cu alloy) of the electrochemical metallization (ECM) mechanism with the oxygen vacancy filament of the valence change memory (VCM) mechanism, achieving both the high on/off ratio of ECM and the analog characteristics of VCM with enhanced reliability. Both resistive and threshold switching characteristics are shown by controlling the compliance current, making the device applicable to artificial synapses and neurons. Notably, this device exhibits heat‐responsive nociceptor characteristics, positioning it as a promising candidate for next‐generation neuromorphic devices.