journal article·2024-09

Simultaneous Reduction of Bulk and Contact Thermal Resistance in High‐Loading Thermal Interface Materials Using Self‐Assembled Monolayers

Xiu He, Xirui Liu, Jiajing Huang, Wenbo Lin, Jiawang Wen, Pochung Huang, Xiaoliang Zeng, Yan Zhang, Qianlong Wang, Yue Lin

Advanced Functional Materials· Volume 34· Issue 37
Publisher page

Abstract

Abstract Thermal interface materials (TIMs) play a pivotal role in the transfer of heat from high‐temperature sources, such as CPUs, to heat sinks in power electronics. The effectiveness of grease‐type TIMs is determined by their effective thermal impedance (REFF), which hinges on optimizing both the specific bulk (RB) and contact (RC) thermal resistances. Achieving concurrent optimization of these resistances poses a significant challenge, especially in high filler loading TIMs, typically above 76 vol%. This research leverages interface engineering through Self‐Assembled Monolayers (SAMs) to address this challenge. A substantial decrease in REFF is realized to 0.169 K cm2 W−1, a tenfold enhancement compared to non‐SAM treated TIMs, which exhibit REFF values of 2.265 K cm2 W−1. This leap in performance is primarily ascribed to the reduced surface energy of SAM treated Al2O3, leading to lower particle‐to‐particle Van der Waals forces, thereby improving particle dispersion and strengthening interfacial bonds. Furthermore, longer carbon chains in SAMs result in increased RB, yet a decrease in RC, due to the chains' capacity for enhanced energy absorption and molecular entanglement. The investigation underscores the significance of shorter‐chain SAMs in fine‐tuning thermal resistance, highlighting the crucial role of molecular architecture in the design of advanced TIMs.
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Research context

OpenAlex topics: Thermal properties of materials · Advanced Thermoelectric Materials and Devices · Heat Transfer and Optimization

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

College of Chemistry Fuzhou University Fuzhou 350002 P. R. China

CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Fuzhou 350002 P. R. China

Fujian College University of Chinese Academy of Sciences Fuzhou 350002 P. R. China

University of Chinese Academy of Sciences Beijing 100049 P. R. China

Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350002 P. R. China

Minjiang University Fuzhou 350002 P. R. China

Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology Chinese Academy of Sciences Shenzhen 518055 P. R. China

Shen‐Rui Graphene Technology Co. Ltd. San Ming 366000 P. R. China

Funding

National Natural Science Foundation of China · Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China · Science Fund for Distinguished Young Scholars of Fujian Province

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