Chemical Vapor Deposition Syntheses of Wafer‐Scale 2D Transition Metal Dichalcogenide Films toward Next‐Generation Integrated Circuits Related Applications

Abstract 2D semiconducting transition metal dichalcogenides (TMDCs), most with a formula of MX₂ (M=Mo, W; X=S, Se, etc.), have emerged as promising channel materials for next‐generation integrated circuits, considering their dangling‐bond‐free surfaces, moderate bandgaps, relatively high carrier mobilities, etc. Wafer‐scale preparation of 2D MX₂ films holds fundamental significance for realizing their applications. Chemical vapor deposition (CVD) is recognized as the most promising method for preparing electronic‐grade 2D MX₂ films. This review hereby summarizes the recent progress in CVD syntheses of wafer‐scale 2D MX₂ films and their applications in logic operations, data storage, and image capturing/processing related fields. The first part focuses on the wafer‐scale syntheses of 2D MX₂ films through designing homogeneous metal precursor supply routes (e.g., precoating soluble precursor, feeding gaseous precursor, designing independent multisource supply or face‐to‐face metal precursor supply routes). The second part highlights the epitaxial growth of monolayer MX₂ single crystals on single‐crystal Au substrates and well‐designed sapphire substrates. The third part introduces various functional device/circuit related applications of CVD‐derived 2D MX₂ wafers. Finally, challenges and prospects are discussed from the viewpoints of the controlled synthesis, reliable characterization, and damage‐free transfer of 2D MX₂, as well as the fabrication and integration of high‐performance devices.