Investigation of gradient band gap in Cu2ZnSnS4 thin films with residual strain
Source abstract
Abstract
This study investigates the change in the band gap of Cu 2ZnSnS 4 (CZTS) thin films under a gradual change in the residual strain of the thin films. Two CZTS thin film samples are fabricated at different initial substrate temperatures before annealing. X-ray diffraction results are obtained at various incidence angles, and the residual strains at the incidence angles are obtained from the Williamson–Hall plot. The larger the mean residual strain of the CZTS thin films, the greater are the redshift and full width at half maximum of the main Raman peak position. Results of Tauc plot analysis show that the CZTS thin film samples exhibit a gradient band gap. The sample with a wider distribution of the residual strain shows a greater band gap variation.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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