Simultaneous Manipulation of Multidimensional Heterojunctions and Dielectric Gene Engineering for Broadband Microwave Absorption

Abstract Multidimensional heterogeneous interface construction and multicomponent dielectric gene optimization have emerged as viable strategies for the design of high‐performance microwave absorbing materials (MAMs) with broad effective absorption bandwidth (EAB). Herein, V ₂ O ₃ /VO/C@Ti ₃ C ₂ T _X /TiO ₂ composites with multidimensional heterostructures are prepared through the electrostatic self‐assembly of modified MIL‐88B(V) with MXene followed by carbonization. A synchronous manipulation of dielectric genes and the intensity of the built‐in electric field (BIEF) is realized by tailoring the carbonation temperature of the precursor. The electron transport properties at the heterogeneous interfaces are precisely modulated by the design of several heterojunctions and BIEFs. Simultaneously, based on theoretical computational simulations and verifications, it is found that the spontaneous BIEF generated by in situ‐constructed heterojunctions can activate the Mott–Schottky barrier, balancing the fermi energy levels on both sides of the interface and enhancing the interface polarization. Benefiting from dielectric gene modulation and the construction of BIEF system, the prepared composites exhibited an RL of –50.10 dB and an EAB value of 6.16 GHz with a fill ratio of 20%. This work offers rational insights for the design of multidimensional heterostructures and the optimization of electron transport properties at heterogeneous interfaces, ultimately aiding the development of stealth materials intended for electronic countermeasures.