Nucleation and growth kinetics of II-O epitaxial layers deposited on 6H–SiC substrates
Source abstract
Abstract
Abstract Nucleation and growth kinetics of II-O epitaxial layers deposited on SiC substrates have been investigated. ZnO nucleates initially with islands and switches to coalescences and grains with the increase of layer thickness, while MgxZn1−xO alloys grow with two-dimensional growth mode. The strain kinetics due to the driving force Δa/a favors the coherent growth of ZnO for the layer thickness of
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Research context
OpenAlex topics: ZnO doping and properties · Semiconductor materials and devices · Copper-based nanomaterials and applications
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References (12)
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1. Strite · J. Vac. Technol. B · 1992 · 10 · 123710.1116/1.585897 ↗
2. Sun · Appl. Phys. Lett. · 2001 · 78 · 338510.1063/1.1375830 ↗
3. Makino · Appl. Phys. Lett. · 2001 · 78 · 123710.1063/1.1350632 ↗
4. Ohtomo · Appl. Phys. Lett. · 1999 · 75 · 263510.1063/1.125102 ↗
5. Ashrafi · Jpn. J. Appl. Phys. Part 2 · 2004 · 43 · 111410.1143/JJAP.43.1114 ↗
6. Ashrafi · J. Vac. Sci. Technol. B · 2005 · 23 · 203010.1116/1.2050653 ↗
7. Jones · J. Cryst. Growth · 1991 · 108 · 7310.1016/0022-0248(91)90355-9 ↗
8. Lu · Appl. Phys. Lett. · 2001 · 78 · 108010.1063/1.1350430 ↗
9. Tinjod · Phys. Status Solidi B · 2004 · 241 · 55010.1002/pssb.200304300 ↗
10. Park · Appl. Phys. Lett. · 2000 · 77 · 34910.1063/1.126972 ↗
11. Ashrafi · Appl. Phys. Lett. · 2004 · 84 · 281410.1063/1.1705722 ↗
12. Makino · Appl. Phys. Lett. · 2001 · 79 · 128210.1063/1.1398328 ↗