Hardware Implementation of Network Connectivity Relationships Using 2D hBN‐Based Artificial Neuron and Synaptic Devices
Source abstract
Abstract
Abstract Brain‐inspired neuromorphic computing has been developed as a potential candidate for solving the von Neumann bottleneck of traditional computing systems. 2D materials‐based memristors have been exponentially investigated as promising building blocks of neuromorphic computing because of their excellent electrical performance, simple structure, and small device scale. However, while many researchers have focused on looking into individual artificial neuromorphic devices based on memristors, only few studies on the integration of artificial neuron and synaptic devices have been reported. In this work, both volatile and nonvolatile memristors are fabricated by using a 2D hexagonal boron nitride film for artificial neuron and synaptic devices, respectively. The leaky‐integrate‐and‐fire neuron performance and synaptic functions (e.g., synaptic weight plasticity and spike‐timing‐dependent plasticity) are well emulated with the fabricated volatile and nonvolatile devices. The MNIST image classification is conducted based on the experimental data. For the first time, an artificial neuron‐synapse‐neuron neural network is physically constructed using the artificial neuron and synaptic devices to mimic the biological neural networks. The synaptic connection strength modulation is experimentally demonstrated between the neurons depending on the conductance state of the synapse, paving the way for the development of large‐scale neural network hardware.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Center for Neuromorphic Engineering Korea Institute of Science and Technology (KIST) 5 Hwarang‐ro 14‐gil, Seongbuk‐gu Seoul 02792 Republic of Korea
Division of Nanoscience and Technology Korea University of Science and Technology (UST) 217 Gajeong‐ro, Yuseong‐gu Daejeon 34113 Republic of Korea
Funding
National Research Foundation of Korea · Korea Institute of Science and Technology
References (62)
Show source-provided references
1. 10.1002/adfm.20200544310.1002/adfm.202005443 ↗
2. 10.1038/s41586-021-04362-w10.1038/s41586-021-04362-w ↗
3. 10.1038/s41563-019-0291-x10.1038/s41563-019-0291-x ↗
4. 10.1002/smll.20220331110.1002/smll.202203311 ↗
5. 10.1002/admt.20190003710.1002/admt.201900037 ↗
6. 10.1038/s41928-017-0006-810.1038/s41928-017-0006-8 ↗
7. 10.1002/adma.20200646910.1002/adma.202006469 ↗
8. 10.1002/smll.20210064010.1002/smll.202100640 ↗
9. 10.1038/s43588-021-00184-y10.1038/s43588-021-00184-y ↗
10. 10.1002/adma.20220504710.1002/adma.202205047 ↗
11. 10.1002/aisy.20200014910.1002/aisy.202000149 ↗
12. 10.1039/D2TC03544H10.1039/D2TC03544H ↗
13. 10.1109/LED.2020.298824710.1109/LED.2020.2988247 ↗
14. 10.1038/s41928-018-0023-210.1038/s41928-018-0023-2 ↗
15. 10.1002/gch2.20190001510.1002/gch2.201900015 ↗
16. 10.1002/adma.20220160810.1002/adma.202201608 ↗
17. 10.1038/s41467-020-18382-z10.1038/s41467-020-18382-z ↗
18. 10.1038/s41467-022-31747-w10.1038/s41467-022-31747-w ↗
19. 10.1002/aisy.20220007610.1002/aisy.202200076 ↗
20. 10.1002/adfm.20200460910.1002/adfm.202004609 ↗
21. 10.1002/adma.20190576410.1002/adma.201905764 ↗
22. 10.1038/s41467-022-29727-110.1038/s41467-022-29727-1 ↗
23. 10.1126/sciadv.ade007210.1126/sciadv.ade0072 ↗
24. 10.1002/aisy.20190016710.1002/aisy.201900167 ↗
25. 10.1038/s41928-018-0021-410.1038/s41928-018-0021-4 ↗
26. 10.1021/acs.jpclett.2c0196210.1021/acs.jpclett.2c01962 ↗
27. 10.1002/adma.20170323210.1002/adma.201703232 ↗
28. 10.1002/adma.20220416110.1002/adma.202204161 ↗
29. 10.1038/s41928-020-00473-w10.1038/s41928-020-00473-w ↗
30. 10.1038/s41928-018-0118-910.1038/s41928-018-0118-9 ↗
31. 10.1002/adfm.20160481110.1002/adfm.201604811 ↗
32. 10.1038/s41467-022-30432-210.1038/s41467-022-30432-2 ↗
33. 10.1002/aelm.20190133510.1002/aelm.201901335 ↗
34. 10.1038/s41467-022-35160-110.1038/s41467-022-35160-1 ↗
35. 10.1038/ncomms523210.1038/ncomms5232 ↗
36. 10.1002/aelm.20190011510.1002/aelm.201900115 ↗
37. 10.1038/nmat475610.1038/nmat4756 ↗
38. 10.1038/nmat410510.1038/nmat4105 ↗
39. 10.1088/0957-4484/25/42/42520210.1088/0957-4484/25/42/425202 ↗
40. 10.1002/pssr.20200047310.1002/pssr.202000473 ↗
41. 10.1021/acsami.0c1201210.1021/acsami.0c12012 ↗
42. 10.1039/C8NR03984D10.1039/C8NR03984D ↗
43. F. M.Puglisi L.Larcher C.Pan N.Xiao Y.Shi F.Hui M.Lanza in2016 IEEE Int. Electron Devices Meeting (IEDM) IEEE Piscataway NJ2016 34.8.1‐34.8.4.10.1109/IEDM.2016.7838544 ↗
44. 10.1088/2053-1583/aa712910.1088/2053-1583/aa7129 ↗
45. 10.1002/adma.20210365610.1002/adma.202103656 ↗
46. S.Agarwal S. J.Plimpton D. R.Hughart A. H.Hsia I.Richter J. A.Cox C. D.James M. J.Marinella in2016 Int. Joint Conf. on Neural Networks (IJCNN) IEEE Piscataway NJ2016 929.10.1109/IJCNN.2016.7727298 ↗
47. 10.1002/adma.20220498210.1002/adma.202204982 ↗
48. 10.1002/aelm.20220100610.1002/aelm.202201006 ↗
49. 10.1021/acsnano.1c0556510.1021/acsnano.1c05565 ↗
50. 10.1109/TED.2022.320617010.1109/TED.2022.3206170 ↗
51. 10.1109/TNANO.2017.271684510.1109/TNANO.2017.2716845 ↗
52. 10.1038/s41598-018-35828-z10.1038/s41598-018-35828-z ↗
53. 10.1103/PhysRevApplied.13.06405610.1103/PhysRevApplied.13.064056 ↗
54. 10.1002/adma.20220368410.1002/adma.202203684 ↗
55. 10.1109/LED.2019.292165610.1109/LED.2019.2921656 ↗
56. 10.1016/j.nanoen.2020.10447210.1016/j.nanoen.2020.104472 ↗
57. 10.1109/TED.2022.316013810.1109/TED.2022.3160138 ↗
58. 10.1016/j.joule.2021.01.00510.1016/j.joule.2021.01.005 ↗
59. 10.1038/s41928-020-0435-710.1038/s41928-020-0435-7 ↗
60. 10.1038/s41928-021-00573-110.1038/s41928-021-00573-1 ↗
61. 10.1038/s41467-020-17215-310.1038/s41467-020-17215-3 ↗
62. 10.1063/1.498678010.1063/1.4986780 ↗