journal article·2021-12Open access

Highly Efficient Nonvolatile Magnetization Switching and Multi‐Level States by Current in Single Van der Waals Topological Ferromagnet Fe3GeTe2

Kaixuan Zhang, Youjin Lee, Matthew J. Coak, Junghyun Kim, Suhan Son, Inho Hwang, Dong‐Su Ko, Youngtek Oh, Insu Jeon, Dohun Kim, Changgan Zeng, Hyun‐Woo Lee, Je‐Geun Park

Advanced Functional Materials· Volume 31· Issue 49

Abstract

Abstract Robust multi‐level spin memory with the ability to write information electrically is a long‐sought capability in spintronics, with great promise for applications. Here, nonvolatile and highly energy‐efficient magnetization switching is achieved in a single‐material device formed of van‐der‐Waals (vdW) topological ferromagnet Fe3GeTe2, whose magnetic information can be readily controlled by a tiny current. Furthermore, the switching current density and power dissipation are about 400 and 4000 times smaller than those of the existing spin‐orbit‐torque magnetic random access memory based on conventional magnet/heavy‐metal systems. Most importantly, multi‐level states, switched by electrical current are also demonstrated, which can dramatically enhance the information capacity density and reduce computing costs. Thus, the observations combine both high energy efficiency and large information capacity density in one device, showcasing the potential applications of the emerging field of vdW magnets in the field of spin memory and spintronics.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Topological Materials and Phenomena · 2D Materials and Applications · Magnetic properties of thin films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Quantum Materials Seoul National University Seoul 08826 South Korea

Department of Physics and Astronomy and Institute of Applied Physics Seoul National University Seoul 08826 South Korea

Center for Correlated Electron Systems Institute for Basic Science Seoul 08826 South Korea

Samsung Advanced Institute of Technology Suwon 16678 South Korea

International Center for Quantum Design of Functional Materials Hefei National Laboratory for Physical Sciences at the Microscale CAS Key Laboratory of Strongly Coupled Quantum Matter Physics Department of Physics and Synergetic Innovation Center of Quantum Information & Quantum Physics University of Science and Technology of China Hefei Anhui 230026 China

Department of Physics Pohang University of Science and Technology Pohang 37673 South Korea

Asia Pacific Center for Theoretical Physics 77 Cheongam‐ro, Nam‐gu Pohang 3773 South Korea

Funding

Institute for Basic Science · National Research Foundation

References (38)

Show source-provided references
1. 10.1088/0953-8984/28/30/30100110.1088/0953-8984/28/30/301001 ↗
2. 10.1021/acs.nanolett.6b0305210.1021/acs.nanolett.6b03052 ↗
3. 10.1038/nature2239110.1038/nature22391 ↗
4. 10.1038/nature2206010.1038/nature22060 ↗
5. 10.1038/s41586-018-0631-z10.1038/s41586-018-0631-z ↗
6. 10.1038/s41586-020-2520-510.1038/s41586-020-2520-5 ↗
7. 10.1126/science.aac943910.1126/science.aac9439 ↗
8. 10.1038/s41467-020-17566-x10.1038/s41467-020-17566-x ↗
9. 10.1126/science.aar361710.1126/science.aar3617 ↗
10. 10.1126/science.aar485110.1126/science.aar4851 ↗
11. 10.1038/s41467-018-04953-810.1038/s41467-018-04953-8 ↗
12. 10.1103/PhysRevB.99.04140210.1103/PhysRevB.99.041402 ↗
13. 10.1038/s41565-019-0438-610.1038/s41565-019-0438-6 ↗
14. 10.1038/s41467-018-04018-w10.1038/s41467-018-04018-w ↗
15. 10.1038/s41563-018-0132-310.1038/s41563-018-0132-3 ↗
16. 10.1038/s41586-018-0626-910.1038/s41586-018-0626-9 ↗
17. 10.1002/adma.20200411010.1002/adma.202004110 ↗
18. 10.1103/PhysRevLett.122.21720310.1103/PhysRevLett.122.217203 ↗
19. F.Martin K.Lee M.Schmitt A.Liedtke A.Shahee H. T.Simensen T.Scholz T. G.Saunderson D.Go M.Gradhand Y.Mokrousov T.Denneulin A.Kovács B.Lotsch A.Brataas M.Kläui arXiv:2107.09420 2021.
20. 10.1126/science.282.5394.166010.1126/science.282.5394.1660 ↗
21. W.Kang L.Chang Y.Zhang W.Zhao inDesign Automation & Test in Europe Conf. & Exhibition IEEE Piscataway NJ2017.
22. 10.1109/TMAG.2017.277218510.1109/TMAG.2017.2772185 ↗
23. 10.1063/1.486340710.1063/1.4863407 ↗
24. 10.1109/TMAG.2005.85528810.1109/TMAG.2005.855288 ↗
25. 10.1109/TMAG.2006.87885310.1109/TMAG.2006.878853 ↗
26. 10.1109/TMAG.2007.89352110.1109/TMAG.2007.893521 ↗
27. Ahmed K. A. · IEEE Magn. Lett. · 2018 · 9 · 5
28. 10.1063/1.509774810.1063/1.5097748 ↗
29. 10.1063/5.001230510.1063/5.0012305 ↗
30. 10.1002/ejic.20050102010.1002/ejic.200501020 ↗
31. 10.1088/1361-648X/ab313510.1088/1361-648X/ab3135 ↗
32. 10.1038/s41565-018-0121-310.1038/s41565-018-0121-3 ↗
33. 10.1038/nnano.2014.9410.1038/nnano.2014.94 ↗
34. 10.1021/acs.nanolett.8b0280610.1021/acs.nanolett.8b02806 ↗
35. 10.1126/sciadv.aaw890410.1126/sciadv.aaw8904 ↗
36. 10.1038/s41563-018-0137-y10.1038/s41563-018-0137-y ↗
37. 10.1038/s41563-018-0136-z10.1038/s41563-018-0136-z ↗
38. 10.1103/PhysRevB.89.21441910.1103/PhysRevB.89.214419 ↗