Dual‐Site Doping and Low‐Angle Grain Boundaries Lead to High Thermoelectric Performance in N‐Type Bi2S3
Abstract
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Topological Materials and Phenomena
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Affiliations
School of Materials Science and Engineering Jiangsu University Zhenjiang 212013 China
State Key Laboratory of Solidification Processing and Key Laboratory of Radiation Detection Materials and Devices Ministry of Industry and Information Technology Northwestern Polytechnical University Xi'an 710072 China
School of Materials Science and Engineering Taiyuan University of Technology Taiyuan 030024 China
Analytical & Testing Center Northwestern Polytechnical University Xi'an 710072 China
Department of Physics Southern University of Science and Technology Shenzhen 518055 China
State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an 710049 China
PGI 10 (Green IT) Forschungszentrum Jülich GmbH 52428 Jülich Germany
Institute of Physics (IA) RWTH Aachen University 52056 Aachen Germany
Funding
National Natural Science Foundation of China · Natural Science Foundation of Jiangsu Province · Fundamental Research Funds for the Central Universities · Deutsche Forschungsgemeinschaft · High Level Innovation and Entrepreneurial Research Team Program in Jiangsu · Qinglan Project of Jiangsu Province of China